Finite-vs. infinite-source emitters in silicon photovoltaics: Effect on transition metal gettering

Hannu S. Laine, Ville Vahanissi, Zhengjun Liu, Haibing Huang, Ernesto Magana, Ashley E. Morishige, Nabil Khelifati, Sebastian Husein, Barry Lai, Mariana Bertoni, Djoudi Bouhafs, Tonio Buonassisi, David P. Fenning, Hele Savin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Control of detrimental metal impurities is crucial to silicon solar cell performance. Traditional silicon solar cell emitters are diffused in an infinite-source regime and are known to cause strong point defect segregation towards the emitter and thus enhance bulk minority carrier diffusion length. With the advent of ion-implantation and chemical vapor deposition (CVD) glasses, finite-source diffused emitters are attracting interest. This contribution aims to increase their adoption by elucidating the dominant gettering mechanisms present in finite-source diffused emitters. Our findings indicate that infinite-source diffusion is critical for effective segregation gettering, but that high enough surface phosphorus concentration can activate segregation gettering via finite-source diffusion as well. In the case of ion- implanted emitters, the traditional segregation gettering may be considerably enhanced by impurity precipitation in the implanted layer.

Original languageEnglish (US)
Title of host publication2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-3
Number of pages3
ISBN (Electronic)9781509056057
DOIs
StatePublished - May 25 2018
Event44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States
Duration: Jun 25 2017Jun 30 2017

Other

Other44th IEEE Photovoltaic Specialist Conference, PVSC 2017
CountryUnited States
CityWashington
Period6/25/176/30/17

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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    Laine, H. S., Vahanissi, V., Liu, Z., Huang, H., Magana, E., Morishige, A. E., Khelifati, N., Husein, S., Lai, B., Bertoni, M., Bouhafs, D., Buonassisi, T., Fenning, D. P., & Savin, H. (2018). Finite-vs. infinite-source emitters in silicon photovoltaics: Effect on transition metal gettering. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (pp. 1-3). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2017.8366089