Finite- vs. infinite-source emitters in silicon photovoltaics: Effect on transition metal gettering

Hannu S. Laine; Ville Vahanissi; Zhengjun Liu; Haibing Huang; Ernesto Magana; Ashley E. Morishige; Nabil Khelifati; Sebastian Husein; Barry Lai; Mariana Bertoni; Djoudi Bouhafs; Tonio Buonassisi; David P. Fenning; Hele Savin

doi:10.1109/PVSC.2016.7749686

Finite- vs. infinite-source emitters in silicon photovoltaics: Effect on transition metal gettering

Hannu S. Laine, Ville Vahanissi, Zhengjun Liu, Haibing Huang, Ernesto Magana, Ashley E. Morishige, Nabil Khelifati, Sebastian Husein, Barry Lai, Mariana Bertoni, Djoudi Bouhafs, Tonio Buonassisi, David P. Fenning, Hele Savin

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

Control of detrimental metal impurities is crucial to silicon solar cell performance. Traditional silicon solar cell emitters are diffused in an infinite-source regime and are known to cause strong point defect segregation towards the emitter and thus enhance bulk minority carrier diffusion length. With the advent of ion-implantation and chemical vapor deposition (CVD) glasses, finite-source diffused emitters are attracting interest. This contribution aims to increase their adoption by elucidating the dominant gettering mechanisms present in finite-source diffused emitters. Our findings indicate that infinite-source diffusion is critical for effective segregation gettering, but that high enough surface phosphorus concentration can activate segregation gettering via finite-source diffusion as well. In the case of ion-implanted emitters, the traditional segregation gettering may be considerably enhanced by impurity precipitation in the implanted layer.

Original language	English (US)
Title of host publication	2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	678-680
Number of pages	3
ISBN (Electronic)	9781509027248
DOIs	https://doi.org/10.1109/PVSC.2016.7749686
State	Published - Nov 18 2016
Event	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: Jun 5 2016 → Jun 10 2016

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
Volume	2016-November
ISSN (Print)	0160-8371

Other

Other	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Country/Territory	United States
City	Portland
Period	6/5/16 → 6/10/16

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

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10.1109/PVSC.2016.7749686

Cite this

Laine, H. S., Vahanissi, V., Liu, Z., Huang, H., Magana, E., Morishige, A. E., Khelifati, N., Husein, S., Lai, B., Bertoni, M., Bouhafs, D., Buonassisi, T., Fenning, D. P., & Savin, H. (2016). Finite- vs. infinite-source emitters in silicon photovoltaics: Effect on transition metal gettering. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (pp. 678-680). Article 7749686 (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2016-November). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2016.7749686

Finite- vs. infinite-source emitters in silicon photovoltaics: Effect on transition metal gettering. / Laine, Hannu S.; Vahanissi, Ville; Liu, Zhengjun et al.
2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 678-680 7749686 (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2016-November).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Laine, HS, Vahanissi, V, Liu, Z, Huang, H, Magana, E, Morishige, AE, Khelifati, N, Husein, S, Lai, B, Bertoni, M, Bouhafs, D, Buonassisi, T, Fenning, DP & Savin, H 2016, Finite- vs. infinite-source emitters in silicon photovoltaics: Effect on transition metal gettering. in 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016., 7749686, Conference Record of the IEEE Photovoltaic Specialists Conference, vol. 2016-November, Institute of Electrical and Electronics Engineers Inc., pp. 678-680, 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 6/5/16. https://doi.org/10.1109/PVSC.2016.7749686

Laine HS, Vahanissi V, Liu Z, Huang H, Magana E, Morishige AE et al. Finite- vs. infinite-source emitters in silicon photovoltaics: Effect on transition metal gettering. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 678-680. 7749686. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC.2016.7749686

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AU - Magana, Ernesto

AU - Morishige, Ashley E.

AU - Khelifati, Nabil

AU - Husein, Sebastian

AU - Lai, Barry

AU - Bertoni, Mariana

AU - Bouhafs, Djoudi

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AB - Control of detrimental metal impurities is crucial to silicon solar cell performance. Traditional silicon solar cell emitters are diffused in an infinite-source regime and are known to cause strong point defect segregation towards the emitter and thus enhance bulk minority carrier diffusion length. With the advent of ion-implantation and chemical vapor deposition (CVD) glasses, finite-source diffused emitters are attracting interest. This contribution aims to increase their adoption by elucidating the dominant gettering mechanisms present in finite-source diffused emitters. Our findings indicate that infinite-source diffusion is critical for effective segregation gettering, but that high enough surface phosphorus concentration can activate segregation gettering via finite-source diffusion as well. In the case of ion-implanted emitters, the traditional segregation gettering may be considerably enhanced by impurity precipitation in the implanted layer.

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Finite- vs. infinite-source emitters in silicon photovoltaics: Effect on transition metal gettering

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