Final state effects in VUV and soft X-ray absorption spectra of transition metal oxides and silicate alloys: Comparisons between experiment and ab initio calculations

G. Lucovsky, Y. Zhang, C. C. Fulton, Y. Zou, R. J. Nemanich, H. Ade, J. L. Whitten

Research output: Contribution to journalArticle


This paper uses X-ray absorption spectroscopy and vacuum ultra-violet spectroscopic ellipsometry to study the electronic structure of high-k transition metal (TM) oxide gate dielectrics. The results are applicable to TM and rare earth (RE) silicate and aluminate alloys, as well as complex oxides comprised of mixed TM/TM and TM/RE oxides. These studies identify the nature of the lowest conduction band d* states, which define the optical band gap, including their relationship to the band gap, Eg, of the oxide.

Original languageEnglish (US)
Pages (from-to)917-919
Number of pages3
JournalJournal of Electron Spectroscopy and Related Phenomena
StatePublished - Jun 1 2005



  • Intra- and inter-atomic transitions
  • Spectroscopic ellipsometry
  • Transition metal oxides
  • X-ray absorption spectra

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Radiation
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Spectroscopy
  • Physical and Theoretical Chemistry

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