Film Bulk Acoustic-wave Resonator (FBAR) based ultraviolet sensor

X. Qiu; J. Zhu; J. Oiler; C. Yu; Z. Wang; H. Yu

doi:10.1109/SENSOR.2009.5285445

Film Bulk Acoustic-wave Resonator (FBAR) based ultraviolet sensor

X. Qiu, J. Zhu, J. Oiler, C. Yu, Z. Wang, H. Yu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This paper described ultraviolet (UV) radiation sensing using ZnO based Film Bulk Acoustic-wave Resonator (FBAR). The resonant frequency upshifted when there was UV illumination on the FBAR. For 365 nm UV light, the frequency upshift was 9.8 kHz with an intensity of 600 μW/cm², and the detection limit of the sensor was 6.5 nW. The frequency increase of the FBAR UV sensor was proposed to be due to the density decrease of ZnO film upon UV illumination. When UV was incident on the ZnO film, it can cause oxygen desorption from the ZnO surface, resulting in density decrease of the film. This study has proven the feasibility of detection of low intensity UV using ZnO film based FBAR.

Original language	English (US)
Title of host publication	TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems
Pages	2354-2357
Number of pages	4
DOIs	https://doi.org/10.1109/SENSOR.2009.5285445
State	Published - Dec 11 2009
Event	TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems - Denver, CO, United States Duration: Jun 21 2009 → Jun 25 2009

Publication series

Name	TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems

Other

Other	TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems
Country	United States
City	Denver, CO
Period	6/21/09 → 6/25/09

Keywords

FBAR
Frequency upshift
UV sensor
ZnO

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/SENSOR.2009.5285445

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Cite this

Qiu, X., Zhu, J., Oiler, J., Yu, C., Wang, Z., & Yu, H. (2009). Film Bulk Acoustic-wave Resonator (FBAR) based ultraviolet sensor. In TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems (pp. 2354-2357). [5285445] (TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems). https://doi.org/10.1109/SENSOR.2009.5285445

Film Bulk Acoustic-wave Resonator (FBAR) based ultraviolet sensor. / Qiu, X.; Zhu, J.; Oiler, J.; Yu, C.; Wang, Z.; Yu, H.

TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems. 2009. p. 2354-2357 5285445 (TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Qiu, X, Zhu, J, Oiler, J, Yu, C, Wang, Z & Yu, H 2009, Film Bulk Acoustic-wave Resonator (FBAR) based ultraviolet sensor. in TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems., 5285445, TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems, pp. 2354-2357, TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems, Denver, CO, United States, 6/21/09. https://doi.org/10.1109/SENSOR.2009.5285445

Qiu X, Zhu J, Oiler J, Yu C, Wang Z, Yu H. Film Bulk Acoustic-wave Resonator (FBAR) based ultraviolet sensor. In TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems. 2009. p. 2354-2357. 5285445. (TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems). https://doi.org/10.1109/SENSOR.2009.5285445

@inproceedings{3411631fecf445fcbee8a71072cd5b37,

title = "Film Bulk Acoustic-wave Resonator (FBAR) based ultraviolet sensor",

abstract = "This paper described ultraviolet (UV) radiation sensing using ZnO based Film Bulk Acoustic-wave Resonator (FBAR). The resonant frequency upshifted when there was UV illumination on the FBAR. For 365 nm UV light, the frequency upshift was 9.8 kHz with an intensity of 600 μW/cm2, and the detection limit of the sensor was 6.5 nW. The frequency increase of the FBAR UV sensor was proposed to be due to the density decrease of ZnO film upon UV illumination. When UV was incident on the ZnO film, it can cause oxygen desorption from the ZnO surface, resulting in density decrease of the film. This study has proven the feasibility of detection of low intensity UV using ZnO film based FBAR.",

keywords = "FBAR, Frequency upshift, UV sensor, ZnO",

author = "X. Qiu and J. Zhu and J. Oiler and C. Yu and Z. Wang and H. Yu",

year = "2009",

month = dec,

day = "11",

doi = "10.1109/SENSOR.2009.5285445",

language = "English (US)",

isbn = "9781424441938",

series = "TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems",

pages = "2354--2357",

booktitle = "TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems",

note = "TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems ; Conference date: 21-06-2009 Through 25-06-2009",

}

TY - GEN

T1 - Film Bulk Acoustic-wave Resonator (FBAR) based ultraviolet sensor

AU - Qiu, X.

AU - Zhu, J.

AU - Oiler, J.

AU - Yu, C.

AU - Wang, Z.

AU - Yu, H.

PY - 2009/12/11

Y1 - 2009/12/11

N2 - This paper described ultraviolet (UV) radiation sensing using ZnO based Film Bulk Acoustic-wave Resonator (FBAR). The resonant frequency upshifted when there was UV illumination on the FBAR. For 365 nm UV light, the frequency upshift was 9.8 kHz with an intensity of 600 μW/cm2, and the detection limit of the sensor was 6.5 nW. The frequency increase of the FBAR UV sensor was proposed to be due to the density decrease of ZnO film upon UV illumination. When UV was incident on the ZnO film, it can cause oxygen desorption from the ZnO surface, resulting in density decrease of the film. This study has proven the feasibility of detection of low intensity UV using ZnO film based FBAR.

AB - This paper described ultraviolet (UV) radiation sensing using ZnO based Film Bulk Acoustic-wave Resonator (FBAR). The resonant frequency upshifted when there was UV illumination on the FBAR. For 365 nm UV light, the frequency upshift was 9.8 kHz with an intensity of 600 μW/cm2, and the detection limit of the sensor was 6.5 nW. The frequency increase of the FBAR UV sensor was proposed to be due to the density decrease of ZnO film upon UV illumination. When UV was incident on the ZnO film, it can cause oxygen desorption from the ZnO surface, resulting in density decrease of the film. This study has proven the feasibility of detection of low intensity UV using ZnO film based FBAR.

KW - FBAR

KW - Frequency upshift

KW - UV sensor

KW - ZnO

UR - http://www.scopus.com/inward/record.url?scp=71449119506&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=71449119506&partnerID=8YFLogxK

U2 - 10.1109/SENSOR.2009.5285445

DO - 10.1109/SENSOR.2009.5285445

M3 - Conference contribution

AN - SCOPUS:71449119506

SN - 9781424441938

T3 - TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems

SP - 2354

EP - 2357

BT - TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems

T2 - TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems

Y2 - 21 June 2009 through 25 June 2009

ER -