Abstract
This paper described ultraviolet (UV) radiation sensing using ZnO based Film Bulk Acoustic-wave Resonator (FBAR). The resonant frequency upshifted when there was UV illumination on the FBAR. For 365 nm UV light, the frequency upshift was 9.8 kHz with an intensity of 600 μW/cm2, and the detection limit of the sensor was 6.5 nW. The frequency increase of the FBAR UV sensor was proposed to be due to the density decrease of ZnO film upon UV illumination. When UV was incident on the ZnO film, it can cause oxygen desorption from the ZnO surface, resulting in density decrease of the film. This study has proven the feasibility of detection of low intensity UV using ZnO film based FBAR.
| Original language | English (US) |
|---|---|
| Title of host publication | TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems |
| Pages | 2354-2357 |
| Number of pages | 4 |
| DOIs | |
| State | Published - 2009 |
| Event | TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems - Denver, CO, United States Duration: Jun 21 2009 → Jun 25 2009 |
Other
| Other | TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems |
|---|---|
| Country | United States |
| City | Denver, CO |
| Period | 6/21/09 → 6/25/09 |
Fingerprint
Keywords
- FBAR
- Frequency upshift
- UV sensor
- ZnO
ASJC Scopus subject areas
- Hardware and Architecture
- Electrical and Electronic Engineering
Cite this
Film Bulk Acoustic-wave Resonator (FBAR) based ultraviolet sensor. / Qiu, X.; Zhu, J.; Oiler, J.; Yu, C.; Wang, Z.; Yu, H.
TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems. 2009. p. 2354-2357 5285445.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Film Bulk Acoustic-wave Resonator (FBAR) based ultraviolet sensor
AU - Qiu, X.
AU - Zhu, J.
AU - Oiler, J.
AU - Yu, C.
AU - Wang, Z.
AU - Yu, H.
PY - 2009
Y1 - 2009
N2 - This paper described ultraviolet (UV) radiation sensing using ZnO based Film Bulk Acoustic-wave Resonator (FBAR). The resonant frequency upshifted when there was UV illumination on the FBAR. For 365 nm UV light, the frequency upshift was 9.8 kHz with an intensity of 600 μW/cm2, and the detection limit of the sensor was 6.5 nW. The frequency increase of the FBAR UV sensor was proposed to be due to the density decrease of ZnO film upon UV illumination. When UV was incident on the ZnO film, it can cause oxygen desorption from the ZnO surface, resulting in density decrease of the film. This study has proven the feasibility of detection of low intensity UV using ZnO film based FBAR.
AB - This paper described ultraviolet (UV) radiation sensing using ZnO based Film Bulk Acoustic-wave Resonator (FBAR). The resonant frequency upshifted when there was UV illumination on the FBAR. For 365 nm UV light, the frequency upshift was 9.8 kHz with an intensity of 600 μW/cm2, and the detection limit of the sensor was 6.5 nW. The frequency increase of the FBAR UV sensor was proposed to be due to the density decrease of ZnO film upon UV illumination. When UV was incident on the ZnO film, it can cause oxygen desorption from the ZnO surface, resulting in density decrease of the film. This study has proven the feasibility of detection of low intensity UV using ZnO film based FBAR.
KW - FBAR
KW - Frequency upshift
KW - UV sensor
KW - ZnO
UR - http://www.scopus.com/inward/record.url?scp=71449119506&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=71449119506&partnerID=8YFLogxK
U2 - 10.1109/SENSOR.2009.5285445
DO - 10.1109/SENSOR.2009.5285445
M3 - Conference contribution
SN - 9781424441938
SP - 2354
EP - 2357
BT - TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems
ER -