Film Bulk Acoustic-wave Resonator (FBAR) based infrared sensor

Ziyu Wang, Xiaotun Qiu, Jon Oiler, Jie Zhu, Hongyu Yu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Scopus citations

Abstract

This paper described an infrared (IR) radiation sensor based on Film Bulk Acoustic-wave Resonator (FBAR). The resonant frequency of FBAR sensor downshifts linearly when there is IR (peak wavelength at 780nm) illumination on the device. This effect attributed to the temperature sensitivity of the FBAR. The noise equivalent temperature difference (NETD) and the detection limit for 780 nm IR of the sensor is 25 mK at 25 °C and 19 μW/mm2, respectively. This study has proven the feasibility of detection of IR using ZnO film based FBAR.

Original languageEnglish (US)
Title of host publication2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010
Pages824-827
Number of pages4
DOIs
StatePublished - Nov 29 2010
Event5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010 - Xiamen, China
Duration: Jan 20 2010Jan 23 2010

Publication series

Name2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010

Other

Other5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010
CountryChina
CityXiamen
Period1/20/101/23/10

Keywords

  • Film bulk acoustic-wave resonator
  • Frequency shift
  • Infrared radiation

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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    Wang, Z., Qiu, X., Oiler, J., Zhu, J., & Yu, H. (2010). Film Bulk Acoustic-wave Resonator (FBAR) based infrared sensor. In 2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010 (pp. 824-827). [5592244] (2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010). https://doi.org/10.1109/NEMS.2010.5592244