Film Bulk Acoustic-wave Resonator (FBAR) based humidity sensor

Xiaotun Qiu, Jie Zhu, Jon Oiler, Cunjiang Yu, Ziyu Wang, Hongyu Yu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

This paper described relative humidity (RH) sensing with ZnO based Film Bulk Acoustic-wave Resonator (FBAR). The resonant frequency of the FBAR decreased in a two-stage manner as the RH increased in the environment. For low RH (RH<50%), a frequency shift of 2.2 kHz per 1% RH change was observed. This effect was attributed to water molecules replacing the adsorbed oxygen on the ZnO surface, thus increasing the density of the film. While for high RH (RH>50%), a frequency shift of 8.5 kHz per 1% RH change was obtained, which was due to the mass loading effect of the water layers formed on the ZnO surface. Ultraviolet (UV) light was applied to monitor its effects on the humidity sensing performance of the FBAR. UV can enhance the sensitivity at low RH (response increased to 3.4 kHz per 1% RH change), while degrade the sensitivity at high RH (response decreased to 5.7 kHz per 1% RH change). This study has proven the feasibility of measuring relative humidity using ZnO film based FBAR.

Original languageEnglish (US)
Title of host publication2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010
Pages445-449
Number of pages5
DOIs
StatePublished - 2010
Event5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010 - Xiamen, China
Duration: Jan 20 2010Jan 23 2010

Other

Other5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010
CountryChina
CityXiamen
Period1/20/101/23/10

Fingerprint

Humidity sensors
Resonators
Atmospheric humidity
Acoustic waves
Natural frequencies

Keywords

  • Film bulk acoustic-wave resonator
  • Frequency shift
  • Relative humidity
  • Ultraviolet

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Qiu, X., Zhu, J., Oiler, J., Yu, C., Wang, Z., & Yu, H. (2010). Film Bulk Acoustic-wave Resonator (FBAR) based humidity sensor. In 2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010 (pp. 445-449). [5592429] https://doi.org/10.1109/NEMS.2010.5592429

Film Bulk Acoustic-wave Resonator (FBAR) based humidity sensor. / Qiu, Xiaotun; Zhu, Jie; Oiler, Jon; Yu, Cunjiang; Wang, Ziyu; Yu, Hongyu.

2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010. 2010. p. 445-449 5592429.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Qiu, X, Zhu, J, Oiler, J, Yu, C, Wang, Z & Yu, H 2010, Film Bulk Acoustic-wave Resonator (FBAR) based humidity sensor. in 2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010., 5592429, pp. 445-449, 5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010, Xiamen, China, 1/20/10. https://doi.org/10.1109/NEMS.2010.5592429
Qiu X, Zhu J, Oiler J, Yu C, Wang Z, Yu H. Film Bulk Acoustic-wave Resonator (FBAR) based humidity sensor. In 2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010. 2010. p. 445-449. 5592429 https://doi.org/10.1109/NEMS.2010.5592429
Qiu, Xiaotun ; Zhu, Jie ; Oiler, Jon ; Yu, Cunjiang ; Wang, Ziyu ; Yu, Hongyu. / Film Bulk Acoustic-wave Resonator (FBAR) based humidity sensor. 2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010. 2010. pp. 445-449
@inproceedings{d9c25a02ea0b445ba5dc90b09ae70e51,
title = "Film Bulk Acoustic-wave Resonator (FBAR) based humidity sensor",
abstract = "This paper described relative humidity (RH) sensing with ZnO based Film Bulk Acoustic-wave Resonator (FBAR). The resonant frequency of the FBAR decreased in a two-stage manner as the RH increased in the environment. For low RH (RH<50{\%}), a frequency shift of 2.2 kHz per 1{\%} RH change was observed. This effect was attributed to water molecules replacing the adsorbed oxygen on the ZnO surface, thus increasing the density of the film. While for high RH (RH>50{\%}), a frequency shift of 8.5 kHz per 1{\%} RH change was obtained, which was due to the mass loading effect of the water layers formed on the ZnO surface. Ultraviolet (UV) light was applied to monitor its effects on the humidity sensing performance of the FBAR. UV can enhance the sensitivity at low RH (response increased to 3.4 kHz per 1{\%} RH change), while degrade the sensitivity at high RH (response decreased to 5.7 kHz per 1{\%} RH change). This study has proven the feasibility of measuring relative humidity using ZnO film based FBAR.",
keywords = "Film bulk acoustic-wave resonator, Frequency shift, Relative humidity, Ultraviolet",
author = "Xiaotun Qiu and Jie Zhu and Jon Oiler and Cunjiang Yu and Ziyu Wang and Hongyu Yu",
year = "2010",
doi = "10.1109/NEMS.2010.5592429",
language = "English (US)",
isbn = "9781424465439",
pages = "445--449",
booktitle = "2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010",

}

TY - GEN

T1 - Film Bulk Acoustic-wave Resonator (FBAR) based humidity sensor

AU - Qiu, Xiaotun

AU - Zhu, Jie

AU - Oiler, Jon

AU - Yu, Cunjiang

AU - Wang, Ziyu

AU - Yu, Hongyu

PY - 2010

Y1 - 2010

N2 - This paper described relative humidity (RH) sensing with ZnO based Film Bulk Acoustic-wave Resonator (FBAR). The resonant frequency of the FBAR decreased in a two-stage manner as the RH increased in the environment. For low RH (RH<50%), a frequency shift of 2.2 kHz per 1% RH change was observed. This effect was attributed to water molecules replacing the adsorbed oxygen on the ZnO surface, thus increasing the density of the film. While for high RH (RH>50%), a frequency shift of 8.5 kHz per 1% RH change was obtained, which was due to the mass loading effect of the water layers formed on the ZnO surface. Ultraviolet (UV) light was applied to monitor its effects on the humidity sensing performance of the FBAR. UV can enhance the sensitivity at low RH (response increased to 3.4 kHz per 1% RH change), while degrade the sensitivity at high RH (response decreased to 5.7 kHz per 1% RH change). This study has proven the feasibility of measuring relative humidity using ZnO film based FBAR.

AB - This paper described relative humidity (RH) sensing with ZnO based Film Bulk Acoustic-wave Resonator (FBAR). The resonant frequency of the FBAR decreased in a two-stage manner as the RH increased in the environment. For low RH (RH<50%), a frequency shift of 2.2 kHz per 1% RH change was observed. This effect was attributed to water molecules replacing the adsorbed oxygen on the ZnO surface, thus increasing the density of the film. While for high RH (RH>50%), a frequency shift of 8.5 kHz per 1% RH change was obtained, which was due to the mass loading effect of the water layers formed on the ZnO surface. Ultraviolet (UV) light was applied to monitor its effects on the humidity sensing performance of the FBAR. UV can enhance the sensitivity at low RH (response increased to 3.4 kHz per 1% RH change), while degrade the sensitivity at high RH (response decreased to 5.7 kHz per 1% RH change). This study has proven the feasibility of measuring relative humidity using ZnO film based FBAR.

KW - Film bulk acoustic-wave resonator

KW - Frequency shift

KW - Relative humidity

KW - Ultraviolet

UR - http://www.scopus.com/inward/record.url?scp=78649235101&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78649235101&partnerID=8YFLogxK

U2 - 10.1109/NEMS.2010.5592429

DO - 10.1109/NEMS.2010.5592429

M3 - Conference contribution

SN - 9781424465439

SP - 445

EP - 449

BT - 2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010

ER -