Film bulk acoustic resonator at 4.4 GHz with ultra low temperature coefficient of resonant frequency

Hongyu Yu, Wei Pang, Hao Zhang, Eun Sok Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

16 Scopus citations

Abstract

This paper describes a temperature compensated Film Bulk Acoustic Resonator (FBAR) with Temperature Coefficient of resonant Frequency (TCP) of-0.45 ppm/°C (between 85 and 110°C) at 4.4 GHz. The FBAR is composed of Al/ZnO/Al/SiO 2 on a surface micromachined cantilever that is released by XeF 2 vapor etching. Residual stress and material temperature parameters have been incorporated into simulations for optimal design of a temperature compensated FBAR.

Original languageEnglish (US)
Title of host publicationProceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
Pages28-31
Number of pages4
StatePublished - 2005
Externally publishedYes
Event18th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2005 Miami - Miami Beach, FL, United States
Duration: Jan 30 2005Feb 3 2005

Other

Other18th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2005 Miami
CountryUnited States
CityMiami Beach, FL
Period1/30/052/3/05

ASJC Scopus subject areas

  • Mechanical Engineering
  • Electrical and Electronic Engineering
  • Control and Systems Engineering

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    Yu, H., Pang, W., Zhang, H., & Kim, E. S. (2005). Film bulk acoustic resonator at 4.4 GHz with ultra low temperature coefficient of resonant frequency. In Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS) (pp. 28-31)