Abstract
This paper describes a temperature compensated Film Bulk Acoustic Resonator (FBAR) with Temperature Coefficient of resonant Frequency (TCP) of-0.45 ppm/°C (between 85 and 110°C) at 4.4 GHz. The FBAR is composed of Al/ZnO/Al/SiO 2 on a surface micromachined cantilever that is released by XeF 2 vapor etching. Residual stress and material temperature parameters have been incorporated into simulations for optimal design of a temperature compensated FBAR.
| Original language | English (US) |
|---|---|
| Title of host publication | Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS) |
| Pages | 28-31 |
| Number of pages | 4 |
| State | Published - 2005 |
| Externally published | Yes |
| Event | 18th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2005 Miami - Miami Beach, FL, United States Duration: Jan 30 2005 → Feb 3 2005 |
Other
| Other | 18th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2005 Miami |
|---|---|
| Country/Territory | United States |
| City | Miami Beach, FL |
| Period | 1/30/05 → 2/3/05 |
ASJC Scopus subject areas
- Mechanical Engineering
- Electrical and Electronic Engineering
- Control and Systems Engineering