Film bulk acoustic resonator at 4.4 GHz with ultra low temperature coefficient of resonant frequency

Hongyu Yu, Wei Pang, Hao Zhang, Eun Sok Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

16 Citations (Scopus)

Abstract

This paper describes a temperature compensated Film Bulk Acoustic Resonator (FBAR) with Temperature Coefficient of resonant Frequency (TCP) of-0.45 ppm/°C (between 85 and 110°C) at 4.4 GHz. The FBAR is composed of Al/ZnO/Al/SiO 2 on a surface micromachined cantilever that is released by XeF 2 vapor etching. Residual stress and material temperature parameters have been incorporated into simulations for optimal design of a temperature compensated FBAR.

Original languageEnglish (US)
Title of host publicationProceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
Pages28-31
Number of pages4
StatePublished - 2005
Externally publishedYes
Event18th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2005 Miami - Miami Beach, FL, United States
Duration: Jan 30 2005Feb 3 2005

Other

Other18th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2005 Miami
CountryUnited States
CityMiami Beach, FL
Period1/30/052/3/05

Fingerprint

Acoustic resonators
Natural frequencies
Temperature
Etching
Residual stresses
Vapors

ASJC Scopus subject areas

  • Mechanical Engineering
  • Electrical and Electronic Engineering
  • Control and Systems Engineering

Cite this

Yu, H., Pang, W., Zhang, H., & Kim, E. S. (2005). Film bulk acoustic resonator at 4.4 GHz with ultra low temperature coefficient of resonant frequency. In Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS) (pp. 28-31)

Film bulk acoustic resonator at 4.4 GHz with ultra low temperature coefficient of resonant frequency. / Yu, Hongyu; Pang, Wei; Zhang, Hao; Kim, Eun Sok.

Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS). 2005. p. 28-31.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yu, H, Pang, W, Zhang, H & Kim, ES 2005, Film bulk acoustic resonator at 4.4 GHz with ultra low temperature coefficient of resonant frequency. in Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS). pp. 28-31, 18th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2005 Miami, Miami Beach, FL, United States, 1/30/05.
Yu H, Pang W, Zhang H, Kim ES. Film bulk acoustic resonator at 4.4 GHz with ultra low temperature coefficient of resonant frequency. In Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS). 2005. p. 28-31
Yu, Hongyu ; Pang, Wei ; Zhang, Hao ; Kim, Eun Sok. / Film bulk acoustic resonator at 4.4 GHz with ultra low temperature coefficient of resonant frequency. Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS). 2005. pp. 28-31
@inproceedings{e8eb5569964b46b29a32c8ae1236beef,
title = "Film bulk acoustic resonator at 4.4 GHz with ultra low temperature coefficient of resonant frequency",
abstract = "This paper describes a temperature compensated Film Bulk Acoustic Resonator (FBAR) with Temperature Coefficient of resonant Frequency (TCP) of-0.45 ppm/°C (between 85 and 110°C) at 4.4 GHz. The FBAR is composed of Al/ZnO/Al/SiO 2 on a surface micromachined cantilever that is released by XeF 2 vapor etching. Residual stress and material temperature parameters have been incorporated into simulations for optimal design of a temperature compensated FBAR.",
author = "Hongyu Yu and Wei Pang and Hao Zhang and Kim, {Eun Sok}",
year = "2005",
language = "English (US)",
pages = "28--31",
booktitle = "Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)",

}

TY - GEN

T1 - Film bulk acoustic resonator at 4.4 GHz with ultra low temperature coefficient of resonant frequency

AU - Yu, Hongyu

AU - Pang, Wei

AU - Zhang, Hao

AU - Kim, Eun Sok

PY - 2005

Y1 - 2005

N2 - This paper describes a temperature compensated Film Bulk Acoustic Resonator (FBAR) with Temperature Coefficient of resonant Frequency (TCP) of-0.45 ppm/°C (between 85 and 110°C) at 4.4 GHz. The FBAR is composed of Al/ZnO/Al/SiO 2 on a surface micromachined cantilever that is released by XeF 2 vapor etching. Residual stress and material temperature parameters have been incorporated into simulations for optimal design of a temperature compensated FBAR.

AB - This paper describes a temperature compensated Film Bulk Acoustic Resonator (FBAR) with Temperature Coefficient of resonant Frequency (TCP) of-0.45 ppm/°C (between 85 and 110°C) at 4.4 GHz. The FBAR is composed of Al/ZnO/Al/SiO 2 on a surface micromachined cantilever that is released by XeF 2 vapor etching. Residual stress and material temperature parameters have been incorporated into simulations for optimal design of a temperature compensated FBAR.

UR - http://www.scopus.com/inward/record.url?scp=20544476268&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=20544476268&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:20544476268

SP - 28

EP - 31

BT - Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

ER -