Field ionization of surface absorbates

Robert Culbertson, T. Sakurai, G. H. Robertson

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

When an auxiliary gas of low ionization potential, such as H2, is added to helium the energy spectrum of field-ionized helium ions displays a second spectral line of greater energy. This satellite line originates from the ionization of field-adsorbed He atoms following their excitation by the impact of electrons released during free-space ionization of the auxiliary gas. Using a magnetic-sector atom-probe field-ion microscope we have studied the field dependence of the difference in energies of the two spectral lines D(F), as a function of crystallographic plane, emitter material, and gas species. From our data and a simple expression for D(F) we have determined the position of the adsorbate with respect to the image plane and the ionic potential at the position of the adsorbate for the (111), (112), and (011) planes of tungsten. Results for Mo, Ir, and Re are also presented.

Original languageEnglish (US)
Pages (from-to)4427-4434
Number of pages8
JournalPhysical Review B
Volume19
Issue number9
DOIs
StatePublished - 1979
Externally publishedYes

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Ionization
Helium
Gases
Adsorbates
ionization
line spectra
gases
Ion microscopes
ion microscopes
Atoms
Tungsten
Ionization potential
helium ions
ionization potentials
adatoms
tungsten
emitters
energy spectra
sectors
helium

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Field ionization of surface absorbates. / Culbertson, Robert; Sakurai, T.; Robertson, G. H.

In: Physical Review B, Vol. 19, No. 9, 1979, p. 4427-4434.

Research output: Contribution to journalArticle

Culbertson, R, Sakurai, T & Robertson, GH 1979, 'Field ionization of surface absorbates', Physical Review B, vol. 19, no. 9, pp. 4427-4434. https://doi.org/10.1103/PhysRevB.19.4427
Culbertson, Robert ; Sakurai, T. ; Robertson, G. H. / Field ionization of surface absorbates. In: Physical Review B. 1979 ; Vol. 19, No. 9. pp. 4427-4434.
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