Field-induced transient hole transport in an Al0.3Ga0.7As-based p-i-n nanostructure studied by picosecond Raman spectroscopy

Y. Chen, Kong-Thon Tsen, O. F. Sankey, D. K. Ferry

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

Electric field-induced transient hole transport in an Al0.3Ga0.7As-based p-i-n nanostructure has been studied by picosecond Raman spectroscopy at T= 300 K. Our experimental results demonstrate that at T= 300 K, for a 5-ps excitation laser pulse and a hole density of nh ≅ 5 × 1017 cm-3, transient hole drift velocity increases from zero to ≅ (3±0.7) × 106 cm/sec when the applied electric field intensity increases from E=0 to 15 kV/cm. The transient hole drift velocity then becomes saturated at ≅(8 ±0.8)× 106 cm/sec for the applied electric field intensity of E≥25 kV/cm and up to 65 kV/cm. These experimental results are in good agreement with Monte Carlo simulations. Simultaneous measurements of transient electron drift velocities indicate that transient electron drift velocities are about three times larger than the corresponding transient hole drift velocities.

Original languageEnglish (US)
Article number195331
Pages (from-to)1953311-1953317
Number of pages7
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume64
Issue number19
StatePublished - Nov 15 2001

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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