Field-induced nonequilibrium electron distribution and electron transport in a high-quality inn thin film grown on GaN

W. Liang; Kong-Thon Tsen; D. K. Ferry; Hai Lu; William J. Schaff

doi:10.1063/1.1739509

Field-induced nonequilibrium electron distribution and electron transport in a high-quality inn thin film grown on GaN

W. Liang, Kong-Thon Tsen, D. K. Ferry, Hai Lu, William J. Schaff

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

Field-induced nonequilibrium electron distribution and electron transport in a high quality, wurtizite structure InN thin films was investigated by picosecond Raman spectroscopy. It was found that the electron drift velocity up to (5.0±0.5)×10 ⁷ cm/s could be achieved at room temperature. It was observed that the fit of the distribution function in the spectral would be improved if some electrons were allowed to suffer specular scattering. The results show that the electric field intensity inside the InN thin film system is 75kV/cm.

Original language	English (US)
Pages (from-to)	3681-3683
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	18
DOIs	https://doi.org/10.1063/1.1739509
State	Published - May 3 2004

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "Field-induced nonequilibrium electron distribution and electron transport in a high quality, wurtizite structure InN thin films was investigated by picosecond Raman spectroscopy. It was found that the electron drift velocity up to (5.0±0.5)×10 7 cm/s could be achieved at room temperature. It was observed that the fit of the distribution function in the spectral would be improved if some electrons were allowed to suffer specular scattering. The results show that the electric field intensity inside the InN thin film system is 75kV/cm.",

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AU - Liang, W.

AU - Tsen, Kong-Thon

AU - Ferry, D. K.

AU - Lu, Hai

AU - Schaff, William J.

PY - 2004/5/3

Y1 - 2004/5/3

N2 - Field-induced nonequilibrium electron distribution and electron transport in a high quality, wurtizite structure InN thin films was investigated by picosecond Raman spectroscopy. It was found that the electron drift velocity up to (5.0±0.5)×10 7 cm/s could be achieved at room temperature. It was observed that the fit of the distribution function in the spectral would be improved if some electrons were allowed to suffer specular scattering. The results show that the electric field intensity inside the InN thin film system is 75kV/cm.

AB - Field-induced nonequilibrium electron distribution and electron transport in a high quality, wurtizite structure InN thin films was investigated by picosecond Raman spectroscopy. It was found that the electron drift velocity up to (5.0±0.5)×10 7 cm/s could be achieved at room temperature. It was observed that the fit of the distribution function in the spectral would be improved if some electrons were allowed to suffer specular scattering. The results show that the electric field intensity inside the InN thin film system is 75kV/cm.

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Field-induced nonequilibrium electron distribution and electron transport in a high-quality inn thin film grown on GaN

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