Field-induced nonequilibrium electron distribution and electron transport in a high-quality inn thin film grown on GaN

W. Liang, Kong-Thon Tsen, D. K. Ferry, Hai Lu, William J. Schaff

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Abstract

Field-induced nonequilibrium electron distribution and electron transport in a high quality, wurtizite structure InN thin films was investigated by picosecond Raman spectroscopy. It was found that the electron drift velocity up to (5.0±0.5)×10 7 cm/s could be achieved at room temperature. It was observed that the fit of the distribution function in the spectral would be improved if some electrons were allowed to suffer specular scattering. The results show that the electric field intensity inside the InN thin film system is 75kV/cm.

Original languageEnglish (US)
Pages (from-to)3681-3683
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number18
DOIs
StatePublished - May 3 2004

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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