Field-induced non-equilibrium electron transport in an In 0.4Ga0.6N epilayer grown on GaN studied by subpicosecond raman spectroscopy

W. Liang, Kong-Thon Tsen, D. K. Ferry, K. H. Kim, J. Y. Lin, H. X. Jiang

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Field-induced electron transport in an InxGa1-xN (x ≅ 0.4) sample grown on GaN has been studied by subpicosecond Raman spectroscopy. Non-equilibrium electron distribution and electron drift velocity due to the presence of piezoelectric and spontaneous fields in the In xGa1-xN layer have been directly measured. The experimental results are compared with ensemble Monte Carlo calculations and reasonable agreements are obtained.

Original languageEnglish (US)
Pages (from-to)S427-S429
JournalSemiconductor Science and Technology
Issue number4 SPEC. ISS.
StatePublished - Apr 1 2004


ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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