Field-induced non-equilibrium electron transport in an In 0.4Ga0.6N epilayer grown on GaN studied by subpicosecond raman spectroscopy

W. Liang, Kong-Thon Tsen, D. K. Ferry, K. H. Kim, J. Y. Lin, H. X. Jiang

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Field-induced electron transport in an InxGa1-xN (x ≅ 0.4) sample grown on GaN has been studied by subpicosecond Raman spectroscopy. Non-equilibrium electron distribution and electron drift velocity due to the presence of piezoelectric and spontaneous fields in the In xGa1-xN layer have been directly measured. The experimental results are compared with ensemble Monte Carlo calculations and reasonable agreements are obtained.

Original languageEnglish (US)
JournalSemiconductor Science and Technology
Volume19
Issue number4 SPEC. ISS.
DOIs
StatePublished - Apr 2004

Fingerprint

Epilayers
Raman spectroscopy
Electrons
electron distribution
electrons
Electron Transport

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Field-induced non-equilibrium electron transport in an In 0.4Ga0.6N epilayer grown on GaN studied by subpicosecond raman spectroscopy. / Liang, W.; Tsen, Kong-Thon; Ferry, D. K.; Kim, K. H.; Lin, J. Y.; Jiang, H. X.

In: Semiconductor Science and Technology, Vol. 19, No. 4 SPEC. ISS., 04.2004.

Research output: Contribution to journalArticle

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AU - Lin, J. Y.

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