Field-induced non-equilibrium electron transport in an In 0.4Ga0.6N epilayer grown on GaN studied by subpicosecond raman spectroscopy

W. Liang; Kong-Thon Tsen; D. K. Ferry; K. H. Kim; J. Y. Lin; H. X. Jiang

doi:10.1088/0268-1242/19/4/140

Field-induced non-equilibrium electron transport in an In _0.4Ga_0.6N epilayer grown on GaN studied by subpicosecond raman spectroscopy

W. Liang, Kong-Thon Tsen, D. K. Ferry, K. H. Kim, J. Y. Lin, H. X. Jiang

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Field-induced electron transport in an In_xGa_1-xN (x ≅ 0.4) sample grown on GaN has been studied by subpicosecond Raman spectroscopy. Non-equilibrium electron distribution and electron drift velocity due to the presence of piezoelectric and spontaneous fields in the In _xGa_1-xN layer have been directly measured. The experimental results are compared with ensemble Monte Carlo calculations and reasonable agreements are obtained.

Original language	English (US)
Pages (from-to)	S427-S429
Journal	Semiconductor Science and Technology
Volume	19
Issue number	4 SPEC. ISS.
DOIs	https://doi.org/10.1088/0268-1242/19/4/140
State	Published - Apr 2004

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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abstract = "Field-induced electron transport in an InxGa1-xN (x ≅ 0.4) sample grown on GaN has been studied by subpicosecond Raman spectroscopy. Non-equilibrium electron distribution and electron drift velocity due to the presence of piezoelectric and spontaneous fields in the In xGa1-xN layer have been directly measured. The experimental results are compared with ensemble Monte Carlo calculations and reasonable agreements are obtained.",

author = "W. Liang and Kong-Thon Tsen and Ferry, {D. K.} and Kim, {K. H.} and Lin, {J. Y.} and Jiang, {H. X.}",

year = "2004",

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T1 - Field-induced non-equilibrium electron transport in an In 0.4Ga0.6N epilayer grown on GaN studied by subpicosecond raman spectroscopy

AU - Liang, W.

AU - Tsen, Kong-Thon

AU - Ferry, D. K.

AU - Kim, K. H.

AU - Lin, J. Y.

AU - Jiang, H. X.

PY - 2004/4

Y1 - 2004/4

N2 - Field-induced electron transport in an InxGa1-xN (x ≅ 0.4) sample grown on GaN has been studied by subpicosecond Raman spectroscopy. Non-equilibrium electron distribution and electron drift velocity due to the presence of piezoelectric and spontaneous fields in the In xGa1-xN layer have been directly measured. The experimental results are compared with ensemble Monte Carlo calculations and reasonable agreements are obtained.

AB - Field-induced electron transport in an InxGa1-xN (x ≅ 0.4) sample grown on GaN has been studied by subpicosecond Raman spectroscopy. Non-equilibrium electron distribution and electron drift velocity due to the presence of piezoelectric and spontaneous fields in the In xGa1-xN layer have been directly measured. The experimental results are compared with ensemble Monte Carlo calculations and reasonable agreements are obtained.

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JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 4 SPEC. ISS.

ER -

Field-induced non-equilibrium electron transport in an In _0.4Ga_0.6N epilayer grown on GaN studied by subpicosecond raman spectroscopy

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