Abstract
Electron transport and phonon dynamics in a GaAs-based (Formula presented)-(Formula presented)-(Formula presented) nanostructure under the application of an electric field have been studied by time-resolved Raman spectroscopy at (Formula presented) K. The time evolution of electron density, electron distribution, electron drift velocity, and LO-phonon population has been directly measured with subpicosecond time resolution. Our experimental results show that, for a photoexcited electron-hole pair density of (Formula presented) cm(Formula presented), the effects of the drifting of electrons and electron intervalley scattering processes govern electron transport properties as well as the LO-phonon dynamics. All of the experimental results are compared with ensemble Monte Carlo simulations and satisfactory agreement is obtained.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 9539-9544 |
| Number of pages | 6 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 56 |
| Issue number | 15 |
| DOIs | |
| State | Published - Jan 1 1997 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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Field-induced electron transport and phonon dynamics in a GaAs-based nanostructure : A subpicosecond time-resolved Raman probe. / Grann, E.; Tsen, Kong-Thon; Ferry, D.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 56, No. 15, 01.01.1997, p. 9539-9544.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Field-induced electron transport and phonon dynamics in a GaAs-based nanostructure
T2 - A subpicosecond time-resolved Raman probe
AU - Grann, E.
AU - Tsen, Kong-Thon
AU - Ferry, D.
PY - 1997/1/1
Y1 - 1997/1/1
N2 - Electron transport and phonon dynamics in a GaAs-based (Formula presented)-(Formula presented)-(Formula presented) nanostructure under the application of an electric field have been studied by time-resolved Raman spectroscopy at (Formula presented) K. The time evolution of electron density, electron distribution, electron drift velocity, and LO-phonon population has been directly measured with subpicosecond time resolution. Our experimental results show that, for a photoexcited electron-hole pair density of (Formula presented) cm(Formula presented), the effects of the drifting of electrons and electron intervalley scattering processes govern electron transport properties as well as the LO-phonon dynamics. All of the experimental results are compared with ensemble Monte Carlo simulations and satisfactory agreement is obtained.
AB - Electron transport and phonon dynamics in a GaAs-based (Formula presented)-(Formula presented)-(Formula presented) nanostructure under the application of an electric field have been studied by time-resolved Raman spectroscopy at (Formula presented) K. The time evolution of electron density, electron distribution, electron drift velocity, and LO-phonon population has been directly measured with subpicosecond time resolution. Our experimental results show that, for a photoexcited electron-hole pair density of (Formula presented) cm(Formula presented), the effects of the drifting of electrons and electron intervalley scattering processes govern electron transport properties as well as the LO-phonon dynamics. All of the experimental results are compared with ensemble Monte Carlo simulations and satisfactory agreement is obtained.
UR - http://www.scopus.com/inward/record.url?scp=0001593089&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0001593089&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.56.9539
DO - 10.1103/PhysRevB.56.9539
M3 - Article
AN - SCOPUS:0001593089
VL - 56
SP - 9539
EP - 9544
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 0163-1829
IS - 15
ER -