Field-induced electron transport and phonon dynamics in a GaAs-based nanostructure: A subpicosecond time-resolved Raman probe

E. Grann, Kong-Thon Tsen, D. Ferry

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Electron transport and phonon dynamics in a GaAs-based (Formula presented)-(Formula presented)-(Formula presented) nanostructure under the application of an electric field have been studied by time-resolved Raman spectroscopy at (Formula presented) K. The time evolution of electron density, electron distribution, electron drift velocity, and LO-phonon population has been directly measured with subpicosecond time resolution. Our experimental results show that, for a photoexcited electron-hole pair density of (Formula presented) cm(Formula presented), the effects of the drifting of electrons and electron intervalley scattering processes govern electron transport properties as well as the LO-phonon dynamics. All of the experimental results are compared with ensemble Monte Carlo simulations and satisfactory agreement is obtained.

Original languageEnglish (US)
Pages (from-to)9539-9544
Number of pages6
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume56
Issue number15
DOIs
StatePublished - Jan 1 1997

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Nanostructures
Electrons
probes
electrons
Electron transport properties
Electron scattering
Carrier concentration
Raman spectroscopy
Electric fields
electron distribution
gallium arsenide
Electron Transport
electron scattering
transport properties
electric fields
simulation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

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abstract = "Electron transport and phonon dynamics in a GaAs-based (Formula presented)-(Formula presented)-(Formula presented) nanostructure under the application of an electric field have been studied by time-resolved Raman spectroscopy at (Formula presented) K. The time evolution of electron density, electron distribution, electron drift velocity, and LO-phonon population has been directly measured with subpicosecond time resolution. Our experimental results show that, for a photoexcited electron-hole pair density of (Formula presented) cm(Formula presented), the effects of the drifting of electrons and electron intervalley scattering processes govern electron transport properties as well as the LO-phonon dynamics. All of the experimental results are compared with ensemble Monte Carlo simulations and satisfactory agreement is obtained.",
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T1 - Field-induced electron transport and phonon dynamics in a GaAs-based nanostructure

T2 - A subpicosecond time-resolved Raman probe

AU - Grann, E.

AU - Tsen, Kong-Thon

AU - Ferry, D.

PY - 1997/1/1

Y1 - 1997/1/1

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AB - Electron transport and phonon dynamics in a GaAs-based (Formula presented)-(Formula presented)-(Formula presented) nanostructure under the application of an electric field have been studied by time-resolved Raman spectroscopy at (Formula presented) K. The time evolution of electron density, electron distribution, electron drift velocity, and LO-phonon population has been directly measured with subpicosecond time resolution. Our experimental results show that, for a photoexcited electron-hole pair density of (Formula presented) cm(Formula presented), the effects of the drifting of electrons and electron intervalley scattering processes govern electron transport properties as well as the LO-phonon dynamics. All of the experimental results are compared with ensemble Monte Carlo simulations and satisfactory agreement is obtained.

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