Abstract
Electron transport and phonon dynamics in a GaAs-based (Formula presented)-(Formula presented)-(Formula presented) nanostructure under the application of an electric field have been studied by time-resolved Raman spectroscopy at (Formula presented) K. The time evolution of electron density, electron distribution, electron drift velocity, and LO-phonon population has been directly measured with subpicosecond time resolution. Our experimental results show that, for a photoexcited electron-hole pair density of (Formula presented) cm(Formula presented), the effects of the drifting of electrons and electron intervalley scattering processes govern electron transport properties as well as the LO-phonon dynamics. All of the experimental results are compared with ensemble Monte Carlo simulations and satisfactory agreement is obtained.
Original language | English (US) |
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Pages (from-to) | 9539-9544 |
Number of pages | 6 |
Journal | Physical Review B - Condensed Matter and Materials Physics |
Volume | 56 |
Issue number | 15 |
DOIs | |
State | Published - Jan 1 1997 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics