Field enhanced thermionic electron emission from sulfur doped nanocrystalline diamond films

F. A.M. Köck; J. M. Garguilo; R. J. Nemanich

doi:10.1016/j.diamond.2004.12.056

Field enhanced thermionic electron emission from sulfur doped nanocrystalline diamond films

F. A.M. Köck, J. M. Garguilo, R. J. Nemanich

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Thermal activation of field enhancement based emitters can provide efficient means of lowering the emission barrier, thus enabling high current density electron sources. Microwave plasma assisted chemical vapour deposition was employed to synthesize sulfur doped nanocrystalline diamond films with various sulfur/carbon concentrations. Electron emission at elevated temperatures was characterized by direct imaging of the emission utilizing electron emission microscopy. Sulfur doped nanocrystalline diamond films exhibit electron emission from singular sites indicating a non-uniform distribution of the local field enhancement. The threshold field for electron emission changes significantly by varying the sulfur/carbon concentration in the gas phase. At elevated temperatures the emission is strongly enhanced but remains confined to the intense emission sites.

Original language	English (US)
Pages (from-to)	704-708
Number of pages	5
Journal	Diamond and Related Materials
Volume	14
Issue number	3-7
DOIs	https://doi.org/10.1016/j.diamond.2004.12.056
State	Published - Mar 2005
Externally published	Yes

Keywords

Doping
Energy conversion
Nanocrystalline
Thermionic emission

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
General Chemistry
Mechanical Engineering
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/j.diamond.2004.12.056

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title = "Field enhanced thermionic electron emission from sulfur doped nanocrystalline diamond films",

abstract = "Thermal activation of field enhancement based emitters can provide efficient means of lowering the emission barrier, thus enabling high current density electron sources. Microwave plasma assisted chemical vapour deposition was employed to synthesize sulfur doped nanocrystalline diamond films with various sulfur/carbon concentrations. Electron emission at elevated temperatures was characterized by direct imaging of the emission utilizing electron emission microscopy. Sulfur doped nanocrystalline diamond films exhibit electron emission from singular sites indicating a non-uniform distribution of the local field enhancement. The threshold field for electron emission changes significantly by varying the sulfur/carbon concentration in the gas phase. At elevated temperatures the emission is strongly enhanced but remains confined to the intense emission sites.",

keywords = "Doping, Energy conversion, Nanocrystalline, Thermionic emission",

author = "K{\"o}ck, {F. A.M.} and Garguilo, {J. M.} and Nemanich, {R. J.}",

note = "Funding Information: This research is supported by the ONR through the TEC-MURI program.",

year = "2005",

month = mar,

doi = "10.1016/j.diamond.2004.12.056",

language = "English (US)",

volume = "14",

pages = "704--708",

journal = "Diamond and Related Materials",

issn = "0925-9635",

publisher = "Elsevier BV",

number = "3-7",

}

TY - JOUR

T1 - Field enhanced thermionic electron emission from sulfur doped nanocrystalline diamond films

AU - Köck, F. A.M.

AU - Garguilo, J. M.

AU - Nemanich, R. J.

N1 - Funding Information: This research is supported by the ONR through the TEC-MURI program.

PY - 2005/3

Y1 - 2005/3

N2 - Thermal activation of field enhancement based emitters can provide efficient means of lowering the emission barrier, thus enabling high current density electron sources. Microwave plasma assisted chemical vapour deposition was employed to synthesize sulfur doped nanocrystalline diamond films with various sulfur/carbon concentrations. Electron emission at elevated temperatures was characterized by direct imaging of the emission utilizing electron emission microscopy. Sulfur doped nanocrystalline diamond films exhibit electron emission from singular sites indicating a non-uniform distribution of the local field enhancement. The threshold field for electron emission changes significantly by varying the sulfur/carbon concentration in the gas phase. At elevated temperatures the emission is strongly enhanced but remains confined to the intense emission sites.

AB - Thermal activation of field enhancement based emitters can provide efficient means of lowering the emission barrier, thus enabling high current density electron sources. Microwave plasma assisted chemical vapour deposition was employed to synthesize sulfur doped nanocrystalline diamond films with various sulfur/carbon concentrations. Electron emission at elevated temperatures was characterized by direct imaging of the emission utilizing electron emission microscopy. Sulfur doped nanocrystalline diamond films exhibit electron emission from singular sites indicating a non-uniform distribution of the local field enhancement. The threshold field for electron emission changes significantly by varying the sulfur/carbon concentration in the gas phase. At elevated temperatures the emission is strongly enhanced but remains confined to the intense emission sites.

KW - Doping

KW - Energy conversion

KW - Nanocrystalline

KW - Thermionic emission

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DO - 10.1016/j.diamond.2004.12.056

M3 - Article

AN - SCOPUS:18444402242

SN - 0925-9635

VL - 14

SP - 704

EP - 708

JO - Diamond and Related Materials

JF - Diamond and Related Materials

IS - 3-7

ER -

Field enhanced thermionic electron emission from sulfur doped nanocrystalline diamond films

Abstract

Keywords

ASJC Scopus subject areas

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