Field emission induced damage from nitrogen doped diamond films grown by microwave plasma CVD

A. T. Sowers; B. L. Ward; Robert Nemanich

Field emission induced damage from nitrogen doped diamond films grown by microwave plasma CVD

A. T. Sowers, B. L. Ward, Robert Nemanich

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The field emission properties of nitrogen doped diamond grown on n-type silicon by microwave plasma chemical vapor deposition (CVD) were explored. Nitrogen gas was used as the nitrogen doping source and was added directly to the process gas. Following deposition, the micro-Raman and photoluminescence spectra were recorded using an excitation source. The sample surfaces were also examined using scanning electron microscopy and optical microscopy. Field emission measurements were obtained in ultrahigh vacuum (UHV) with a position-variable anode system. With this arrangement, current voltage measurements are possible at numerous cathode to anode spacings.

Original language	English (US)
Title of host publication	Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC
Place of Publication	Piscataway, NJ, United States
Publisher	IEEE
Pages	202-203
Number of pages	2
State	Published - 1998
Externally published	Yes
Event	Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC - Asheville, NC, USA Duration: Jul 19 1998 → Jul 24 1998

Other

Other	Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC
City	Asheville, NC, USA
Period	7/19/98 → 7/24/98

ASJC Scopus subject areas

Surfaces and Interfaces

Cite this

Sowers, AT, Ward, BL & Nemanich, R 1998, Field emission induced damage from nitrogen doped diamond films grown by microwave plasma CVD. in Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. IEEE, Piscataway, NJ, United States, pp. 202-203, Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC, Asheville, NC, USA, 7/19/98.

@inproceedings{e15d2c32693a45d9b20d187c08e57856,

title = "Field emission induced damage from nitrogen doped diamond films grown by microwave plasma CVD",

abstract = "The field emission properties of nitrogen doped diamond grown on n-type silicon by microwave plasma chemical vapor deposition (CVD) were explored. Nitrogen gas was used as the nitrogen doping source and was added directly to the process gas. Following deposition, the micro-Raman and photoluminescence spectra were recorded using an excitation source. The sample surfaces were also examined using scanning electron microscopy and optical microscopy. Field emission measurements were obtained in ultrahigh vacuum (UHV) with a position-variable anode system. With this arrangement, current voltage measurements are possible at numerous cathode to anode spacings.",

author = "Sowers, {A. T.} and Ward, {B. L.} and Robert Nemanich",

year = "1998",

language = "English (US)",

pages = "202--203",

booktitle = "Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC",

publisher = "IEEE",

note = "Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC ; Conference date: 19-07-1998 Through 24-07-1998",

}

TY - GEN

T1 - Field emission induced damage from nitrogen doped diamond films grown by microwave plasma CVD

AU - Sowers, A. T.

AU - Ward, B. L.

AU - Nemanich, Robert

PY - 1998

Y1 - 1998

N2 - The field emission properties of nitrogen doped diamond grown on n-type silicon by microwave plasma chemical vapor deposition (CVD) were explored. Nitrogen gas was used as the nitrogen doping source and was added directly to the process gas. Following deposition, the micro-Raman and photoluminescence spectra were recorded using an excitation source. The sample surfaces were also examined using scanning electron microscopy and optical microscopy. Field emission measurements were obtained in ultrahigh vacuum (UHV) with a position-variable anode system. With this arrangement, current voltage measurements are possible at numerous cathode to anode spacings.

AB - The field emission properties of nitrogen doped diamond grown on n-type silicon by microwave plasma chemical vapor deposition (CVD) were explored. Nitrogen gas was used as the nitrogen doping source and was added directly to the process gas. Following deposition, the micro-Raman and photoluminescence spectra were recorded using an excitation source. The sample surfaces were also examined using scanning electron microscopy and optical microscopy. Field emission measurements were obtained in ultrahigh vacuum (UHV) with a position-variable anode system. With this arrangement, current voltage measurements are possible at numerous cathode to anode spacings.

UR - http://www.scopus.com/inward/record.url?scp=0032319793&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032319793&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0032319793

SP - 202

EP - 203

BT - Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC

PB - IEEE

CY - Piscataway, NJ, United States

T2 - Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC

Y2 - 19 July 1998 through 24 July 1998

ER -

Field emission induced damage from nitrogen doped diamond films grown by microwave plasma CVD

Abstract

Other

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this