Field emission induced damage from nitrogen doped diamond films grown by microwave plasma CVD

A. T. Sowers, B. L. Ward, Robert Nemanich

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The field emission properties of nitrogen doped diamond grown on n-type silicon by microwave plasma chemical vapor deposition (CVD) were explored. Nitrogen gas was used as the nitrogen doping source and was added directly to the process gas. Following deposition, the micro-Raman and photoluminescence spectra were recorded using an excitation source. The sample surfaces were also examined using scanning electron microscopy and optical microscopy. Field emission measurements were obtained in ultrahigh vacuum (UHV) with a position-variable anode system. With this arrangement, current voltage measurements are possible at numerous cathode to anode spacings.

Original languageEnglish (US)
Title of host publicationProceedings of the IEEE International Vacuum Microelectronics Conference, IVMC
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages202-203
Number of pages2
StatePublished - 1998
Externally publishedYes
EventProceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC - Asheville, NC, USA
Duration: Jul 19 1998Jul 24 1998

Other

OtherProceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC
CityAsheville, NC, USA
Period7/19/987/24/98

ASJC Scopus subject areas

  • Surfaces and Interfaces

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