Field effect on the impact ionization rate in semiconductors

R. Redmer, J. R. Madureira, N. Fitzer, Stephen Goodnick, W. Schattke, E. Schöll

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17 Scopus citations

Abstract

Impact ionization plays a crucial role for electron transport in semiconductors at high electric fields. We derive appropriate quantum kinetic equations for electron transport in semiconductors within linear response theory. The field-dependent collision integral is evaluated for the process of impact ionization. A known, essentially analytical result is reproduced within the parabolic band approximation [W. Quade et al., Phys. Rev. B 50, 7398 (1994)]. Based on the numerical results for zero field strengths but realistic band structures, a fit formula is proposed for the respective field-dependent impact ionization rate. Explicit results are given for GaAs, Si, GaN, ZnS, and SrS.

Original languageEnglish (US)
Pages (from-to)781-788
Number of pages8
JournalJournal of Applied Physics
Volume87
Issue number2
DOIs
StatePublished - Jan 15 2000

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Redmer, R., Madureira, J. R., Fitzer, N., Goodnick, S., Schattke, W., & Schöll, E. (2000). Field effect on the impact ionization rate in semiconductors. Journal of Applied Physics, 87(2), 781-788. https://doi.org/10.1063/1.371941