Field effect on the impact ionization rate in semiconductors

R. Redmer, J. R. Madureira, N. Fitzer, Stephen Goodnick, W. Schattke, E. Schöll

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Impact ionization plays a crucial role for electron transport in semiconductors at high electric fields. We derive appropriate quantum kinetic equations for electron transport in semiconductors within linear response theory. The field-dependent collision integral is evaluated for the process of impact ionization. A known, essentially analytical result is reproduced within the parabolic band approximation [W. Quade et al., Phys. Rev. B 50, 7398 (1994)]. Based on the numerical results for zero field strengths but realistic band structures, a fit formula is proposed for the respective field-dependent impact ionization rate. Explicit results are given for GaAs, Si, GaN, ZnS, and SrS.

Original languageEnglish (US)
Pages (from-to)781-788
Number of pages8
JournalJournal of Applied Physics
Volume87
Issue number2
StatePublished - Jan 15 2000

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ionization
kinetic equations
field strength
electrons
collisions
electric fields
approximation

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Redmer, R., Madureira, J. R., Fitzer, N., Goodnick, S., Schattke, W., & Schöll, E. (2000). Field effect on the impact ionization rate in semiconductors. Journal of Applied Physics, 87(2), 781-788.

Field effect on the impact ionization rate in semiconductors. / Redmer, R.; Madureira, J. R.; Fitzer, N.; Goodnick, Stephen; Schattke, W.; Schöll, E.

In: Journal of Applied Physics, Vol. 87, No. 2, 15.01.2000, p. 781-788.

Research output: Contribution to journalArticle

Redmer, R, Madureira, JR, Fitzer, N, Goodnick, S, Schattke, W & Schöll, E 2000, 'Field effect on the impact ionization rate in semiconductors', Journal of Applied Physics, vol. 87, no. 2, pp. 781-788.
Redmer R, Madureira JR, Fitzer N, Goodnick S, Schattke W, Schöll E. Field effect on the impact ionization rate in semiconductors. Journal of Applied Physics. 2000 Jan 15;87(2):781-788.
Redmer, R. ; Madureira, J. R. ; Fitzer, N. ; Goodnick, Stephen ; Schattke, W. ; Schöll, E. / Field effect on the impact ionization rate in semiconductors. In: Journal of Applied Physics. 2000 ; Vol. 87, No. 2. pp. 781-788.
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