Field effect and localization in InGaN/GaN quantum wells

A. Bell, Fernando Ponce, H. Marui, S. Tanaka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper single InGaN quantum wells with GaN barriers were grown by metal organic chemical vapour deposition on sapphire substrates. Time resolved CL measurements performed on single GaN/In0.13Ga0.87N/GaN quantum wells with d=6 nm and d=8 nm. Using the onset portion of the time delayed spectra we find that both localisation in potential fluctuations and band tilting due to fields have an effect on the recombination in InGaN/GaN quantum well.

Original languageEnglish (US)
Title of host publicationIEEE International Symposium on Compound Semiconductors, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages6-7
Number of pages2
Volume2003-January
ISBN (Print)0780378202
DOIs
StatePublished - 2003
Event2003 International Symposium on Compound Semiconductors, ISCS 2003 - San Diego, United States
Duration: Aug 25 2003Aug 27 2003

Other

Other2003 International Symposium on Compound Semiconductors, ISCS 2003
CountryUnited States
CitySan Diego
Period8/25/038/27/03

Keywords

  • Astronomy
  • Electron beams
  • Fluctuations
  • Gallium nitride
  • Physics
  • Pulse measurements
  • Pulse modulation
  • Radiative recombination
  • Spectroscopy
  • Spontaneous emission

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Bell, A., Ponce, F., Marui, H., & Tanaka, S. (2003). Field effect and localization in InGaN/GaN quantum wells. In IEEE International Symposium on Compound Semiconductors, Proceedings (Vol. 2003-January, pp. 6-7). [1239878] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCS.2003.1239878