Abstract
In this paper single InGaN quantum wells with GaN barriers were grown by metal organic chemical vapour deposition on sapphire substrates. Time resolved CL measurements performed on single GaN/In0.13Ga0.87N/GaN quantum wells with d=6 nm and d=8 nm. Using the onset portion of the time delayed spectra we find that both localisation in potential fluctuations and band tilting due to fields have an effect on the recombination in InGaN/GaN quantum well.
Original language | English (US) |
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Title of host publication | IEEE International Symposium on Compound Semiconductors, Proceedings |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 6-7 |
Number of pages | 2 |
Volume | 2003-January |
ISBN (Print) | 0780378202 |
DOIs | |
State | Published - 2003 |
Event | 2003 International Symposium on Compound Semiconductors, ISCS 2003 - San Diego, United States Duration: Aug 25 2003 → Aug 27 2003 |
Other
Other | 2003 International Symposium on Compound Semiconductors, ISCS 2003 |
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Country/Territory | United States |
City | San Diego |
Period | 8/25/03 → 8/27/03 |
Keywords
- Astronomy
- Electron beams
- Fluctuations
- Gallium nitride
- Physics
- Pulse measurements
- Pulse modulation
- Radiative recombination
- Spectroscopy
- Spontaneous emission
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials