Ferroelectrically Gated Atomically Thin Transition-Metal Dichalcogenides as Nonvolatile Memory

Changhyun Ko, Yeonbae Lee, Yabin Chen, Joonki Suh, Deyi Fu, Aslihan Suslu, Sangwook Lee, James David Clarkson, Hwan Sung Choe, Sefaattin Tongay, Ramamoorthy Ramesh, Junqiao Wu

Research output: Contribution to journalArticle

53 Scopus citations

Abstract

Ferroelectrically driven nonvolatile memory is demonstrated by interfacing 2D semiconductors and ferroelectric thin films, exhibiting superior memory performance comparable to existing thin-film ferroelectric field-effect transistors. An optical memory effect is also observed with large modulation of photoluminescence tuned by the ferroelectric gating, potentially finding applications in optoelectronics and valleytronics.

Original languageEnglish (US)
JournalAdvanced Materials
DOIs
StateAccepted/In press - 2016

Keywords

  • 2D materials
  • Ferroelectrics
  • Field-effect transistors
  • Nonvolatile memory
  • Transition-metal dichalcogenides

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Ko, C., Lee, Y., Chen, Y., Suh, J., Fu, D., Suslu, A., Lee, S., Clarkson, J. D., Choe, H. S., Tongay, S., Ramesh, R., & Wu, J. (Accepted/In press). Ferroelectrically Gated Atomically Thin Transition-Metal Dichalcogenides as Nonvolatile Memory. Advanced Materials. https://doi.org/10.1002/adma.201504779