Abstract
The application of ferroelectric thinfilm capacitors as connection element “synapses” in artificial neural network (ANN) integrated circuits (IC's) is described. A review of basic neural network structure, with an emphasis on electrical implementation in IC form is given. A binary (on/off efficacy) connection scheme of very high density is then described and analyzed. A continuous-valued synapse (analog memory) where the efficacy is controlled by the polarization of a ferroelectric capacitor element is then described. This analog synapse utilizes nondestructive readout and requires very infrequent refresh.
Original language | English (US) |
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Pages (from-to) | 205-213 |
Number of pages | 9 |
Journal | Ferroelectrics |
Volume | 116 |
Issue number | 1 |
DOIs | |
State | Published - Apr 1991 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics