Ferroelectric thinfilm memory for electrically programmable ic neural networks

L. T. Clark, Sandwip Dey, R. O. Grondin

Research output: Contribution to journalArticle

10 Scopus citations

Abstract

The application of ferroelectric thinfilm capacitors as connection element “synapses” in artificial neural network (ANN) integrated circuits (IC's) is described. A review of basic neural network structure, with an emphasis on electrical implementation in IC form is given. A binary (on/off efficacy) connection scheme of very high density is then described and analyzed. A continuous-valued synapse (analog memory) where the efficacy is controlled by the polarization of a ferroelectric capacitor element is then described. This analog synapse utilizes nondestructive readout and requires very infrequent refresh.

Original languageEnglish (US)
Pages (from-to)205-213
Number of pages9
JournalFerroelectrics
Volume116
Issue number1
DOIs
StatePublished - Apr 1991

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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