Abstract
The application of ferroelectric thin-film capacitors as connection element synapses in artificial neural network integrated circuits is described. A continuous-valued synapse (analog memory) where the synaptic efficacy is controlled by the polarization of a ferroelectric capacitor element is then described. This analog synapse utilized a non-destructive readout and required very infrequent refresh. A ferroelectric capacitor circuit model added to the SPICE circuit simulation program is discussed.
Original language | English (US) |
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Title of host publication | 90 IEEE 7 Int Symp Appl Ferroelectr |
Publisher | Publ by IEEE |
Pages | 730-732 |
Number of pages | 3 |
ISBN (Print) | 0780301900 |
State | Published - Dec 1 1992 |
Event | 1990 IEEE 7th International Symposium on Applications of Ferroelectrics - Champaign, IL, USA Duration: Jun 6 1990 → Jun 8 1990 |
Publication series
Name | 90 IEEE 7 Int Symp Appl Ferroelectr |
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Other
Other | 1990 IEEE 7th International Symposium on Applications of Ferroelectrics |
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City | Champaign, IL, USA |
Period | 6/6/90 → 6/8/90 |
ASJC Scopus subject areas
- Engineering(all)