Ferroelectric thin-film connections in integrated circuit neural networks

L. T. Clark, Sandwip Dey, R. O. Grondin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The application of ferroelectric thin-film capacitors as connection element synapses in artificial neural network integrated circuits is described. A continuous-valued synapse (analog memory) where the synaptic efficacy is controlled by the polarization of a ferroelectric capacitor element is then described. This analog synapse utilized a non-destructive readout and required very infrequent refresh. A ferroelectric capacitor circuit model added to the SPICE circuit simulation program is discussed.

Original languageEnglish (US)
Title of host publication90 IEEE 7 Int Symp Appl Ferroelectr
PublisherPubl by IEEE
Pages730-732
Number of pages3
ISBN (Print)0780301900
StatePublished - Dec 1 1992
Event1990 IEEE 7th International Symposium on Applications of Ferroelectrics - Champaign, IL, USA
Duration: Jun 6 1990Jun 8 1990

Publication series

Name90 IEEE 7 Int Symp Appl Ferroelectr

Other

Other1990 IEEE 7th International Symposium on Applications of Ferroelectrics
CityChampaign, IL, USA
Period6/6/906/8/90

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Clark, L. T., Dey, S., & Grondin, R. O. (1992). Ferroelectric thin-film connections in integrated circuit neural networks. In 90 IEEE 7 Int Symp Appl Ferroelectr (pp. 730-732). (90 IEEE 7 Int Symp Appl Ferroelectr). Publ by IEEE.