Fermi level pinning and Schottky barrier characteristics on reactively ion etched 4H-SiC

Brian Skromme, E. Luckowski, K. Moore, S. Clemens, D. Resnick, T. Gehoski, D. Ganser

Research output: Chapter in Book/Report/Conference proceedingChapter

4 Scopus citations

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Chemical Compounds

Engineering & Materials Science