Fermi level pinning and Schottky barrier characteristics on reactively ion etched 4H-SiC

Brian Skromme, E. Luckowski, K. Moore, S. Clemens, D. Resnick, T. Gehoski, D. Ganser

Research output: Chapter in Book/Report/Conference proceedingChapter

4 Scopus citations

Abstract

The effects of reactively ion etching 4H-SiC epilayers in a CHF 3/O 2 gas mixture on the properties of Pt, Ni, and Ti Schottky barriers subsequently deposited on the etched surfaces are investigated using forward and reverse current-voltage (I-V) and capacitance-voltage (C-V) measurements. Pronounced Fermi level pinning is present on the etched surfaces, and the forward I-V characteristics become anomalous. Average C-V barrier heights are 1.65, 1.44, and 0.81 V for Pt, Ni, and Ti on unetched material, respectively; and 1.42, 1.40, and 1.29 V, respectively, on etched material without annealing. The I-V characteristics are more uniform on etched material, and reverse leakage can be made acceptably low with suitable annealing for all three metals on etched material.

Original languageEnglish (US)
Title of host publicationMaterials Science Forum
PublisherTrans Tech Publ Ltd
Volume338
StatePublished - 2000
EventICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
Duration: Oct 10 1999Oct 15 1999

Other

OtherICSCRM '99: The International Conference on Silicon Carbide and Related Materials
CityResearch Triangle Park, NC, USA
Period10/10/9910/15/99

ASJC Scopus subject areas

  • Materials Science(all)

Fingerprint Dive into the research topics of 'Fermi level pinning and Schottky barrier characteristics on reactively ion etched 4H-SiC'. Together they form a unique fingerprint.

  • Cite this

    Skromme, B., Luckowski, E., Moore, K., Clemens, S., Resnick, D., Gehoski, T., & Ganser, D. (2000). Fermi level pinning and Schottky barrier characteristics on reactively ion etched 4H-SiC. In Materials Science Forum (Vol. 338). Trans Tech Publ Ltd.