Femtosecond hole relaxation in n-type modulation-doped quantum wells

Akihisa Tomita; Jagdeep Shah; J. E. Cunningham; Stephen M. Goodnick; P. Lugli; Shun L. Chuang

doi:10.1103/PhysRevB.48.5708

Femtosecond hole relaxation in n-type modulation-doped quantum wells

Akihisa Tomita, Jagdeep Shah, J. E. Cunningham, Stephen M. Goodnick, P. Lugli, Shun L. Chuang

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

We present a study of femtosecond hole-relaxation dynamics in n-modulation-doped GaAs/AlxGa1-xAs quantum wells at low temperatures and low photoexcitation density. We conclude that holes are nonthermal for approximately the first 800 fs and determine the hole-electron energy loss rates by comparing experimental results with Monte Carlo simulations. These results represent a definitive study of hole scattering and relaxation processes in a semiconductor.

Original language	English (US)
Pages (from-to)	5708-5711
Number of pages	4
Journal	Physical Review B
Volume	48
Issue number	8
DOIs	https://doi.org/10.1103/PhysRevB.48.5708
State	Published - 1993
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics

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10.1103/PhysRevB.48.5708

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@article{20eaf49be6694bb3b173173ef9bbe440,

title = "Femtosecond hole relaxation in n-type modulation-doped quantum wells",

abstract = "We present a study of femtosecond hole-relaxation dynamics in n-modulation-doped GaAs/AlxGa1-xAs quantum wells at low temperatures and low photoexcitation density. We conclude that holes are nonthermal for approximately the first 800 fs and determine the hole-electron energy loss rates by comparing experimental results with Monte Carlo simulations. These results represent a definitive study of hole scattering and relaxation processes in a semiconductor.",

author = "Akihisa Tomita and Jagdeep Shah and Cunningham, {J. E.} and Goodnick, {Stephen M.} and P. Lugli and Chuang, {Shun L.}",

year = "1993",

doi = "10.1103/PhysRevB.48.5708",

language = "English (US)",

volume = "48",

pages = "5708--5711",

journal = "Physical Review B",

issn = "0163-1829",

publisher = "American Physical Society",

number = "8",

}

TY - JOUR

T1 - Femtosecond hole relaxation in n-type modulation-doped quantum wells

AU - Tomita, Akihisa

AU - Shah, Jagdeep

AU - Cunningham, J. E.

AU - Goodnick, Stephen M.

AU - Lugli, P.

AU - Chuang, Shun L.

PY - 1993

Y1 - 1993

N2 - We present a study of femtosecond hole-relaxation dynamics in n-modulation-doped GaAs/AlxGa1-xAs quantum wells at low temperatures and low photoexcitation density. We conclude that holes are nonthermal for approximately the first 800 fs and determine the hole-electron energy loss rates by comparing experimental results with Monte Carlo simulations. These results represent a definitive study of hole scattering and relaxation processes in a semiconductor.

AB - We present a study of femtosecond hole-relaxation dynamics in n-modulation-doped GaAs/AlxGa1-xAs quantum wells at low temperatures and low photoexcitation density. We conclude that holes are nonthermal for approximately the first 800 fs and determine the hole-electron energy loss rates by comparing experimental results with Monte Carlo simulations. These results represent a definitive study of hole scattering and relaxation processes in a semiconductor.

UR - http://www.scopus.com/inward/record.url?scp=0000115071&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000115071&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.48.5708

DO - 10.1103/PhysRevB.48.5708

M3 - Article

AN - SCOPUS:0000115071

SN - 0163-1829

VL - 48

SP - 5708

EP - 5711

JO - Physical Review B

JF - Physical Review B

IS - 8

ER -

Femtosecond hole relaxation in n-type modulation-doped quantum wells

Abstract

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