We present a study of femtosecond hole-relaxation dynamics in n-modulation-doped GaAs/AlxGa1-xAs quantum wells at low temperatures and low photoexcitation density. We conclude that holes are nonthermal for approximately the first 800 fs and determine the hole-electron energy loss rates by comparing experimental results with Monte Carlo simulations. These results represent a definitive study of hole scattering and relaxation processes in a semiconductor.
ASJC Scopus subject areas
- Condensed Matter Physics