Femtosecond hole relaxation in n-type modulation-doped quantum wells

Akihisa Tomita, Jagdeep Shah, J. E. Cunningham, Stephen M. Goodnick, P. Lugli, Shun L. Chuang

Research output: Contribution to journalArticlepeer-review

34 Scopus citations

Abstract

We present a study of femtosecond hole-relaxation dynamics in n-modulation-doped GaAs/AlxGa1-xAs quantum wells at low temperatures and low photoexcitation density. We conclude that holes are nonthermal for approximately the first 800 fs and determine the hole-electron energy loss rates by comparing experimental results with Monte Carlo simulations. These results represent a definitive study of hole scattering and relaxation processes in a semiconductor.

Original languageEnglish (US)
Pages (from-to)5708-5711
Number of pages4
JournalPhysical Review B
Volume48
Issue number8
DOIs
StatePublished - Jan 1 1993
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics

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