Femtosecond hole relaxation in n-type modulation-doped quantum wells

Akihisa Tomita, Jagdeep Shah, J. E. Cunningham, Stephen M. Goodnick, P. Lugli, Shun L. Chuang

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Abstract

We present a study of femtosecond hole-relaxation dynamics in n-modulation-doped GaAs/AlxGa1-xAs quantum wells at low temperatures and low photoexcitation density. We conclude that holes are nonthermal for approximately the first 800 fs and determine the hole-electron energy loss rates by comparing experimental results with Monte Carlo simulations. These results represent a definitive study of hole scattering and relaxation processes in a semiconductor.

Original languageEnglish (US)
Pages (from-to)5708-5711
Number of pages4
JournalPhysical Review B
Volume48
Issue number8
DOIs
StatePublished - Jan 1 1993

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ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Tomita, A., Shah, J., Cunningham, J. E., Goodnick, S. M., Lugli, P., & Chuang, S. L. (1993). Femtosecond hole relaxation in n-type modulation-doped quantum wells. Physical Review B, 48(8), 5708-5711. https://doi.org/10.1103/PhysRevB.48.5708