Compute-in-memory (CiM) is a promising method for mitigating the memory wall problem in data-intensive applications. The proposed bitwise logic-in-memory (BLiM) is targeted at data intensive applications, such as database, data encryption. This work proposes a low-power BLiM approach using the emerging nonvolatile ferroelectric FETs with direct write-back and data-Adaptive dynamic sensing interface. Apart from general-purpose random-Access memory, it also supports BLiM operations such as copy, not, nand, xor, and full adder (FA). The novel features of the proposed architecture include: (i) direct result-write-back based on the remnant bitline BLiM charge that avoids bitline sensing and charging operations; (ii) a fully dynamic sensing interface that needs no static reference current, but adopts data-Adaptive voltage references for certain multi-operand operations, and (iii) selective bitline charging from wordline (instead of pre-charging all bitlines) to save power and also enable direct write-back. Detailed BLiM operations and benchmarking against conventional approaches show the promise of low-power computing with the FeFET-based circuit techniques.