Feature scale simulation studies of TEOS-sourced remote microwave plasma-enhanced chemical vapor deposition of silicon dioxide: Role of oxygen atom recombination

Moneth Virmani, Dimitri A. Levedakis, Gregory Raupp, Timothy S. Cale

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10 Citations (Scopus)

Abstract

Experimental data and feature scale simulations are combined to test a kinetic model proposed for remote microwave plasma-enhanced chemical vapor deposition (RμPECVD) of silicon dioxide from tetraethylorthosilicate (TEOS) and oxygen. The constitutive relationships used are refinements of those developed for the direct capacitively coupled rf PECVD of SiO2, using TEOS and oxygen. We discriminate between a first order and a second order oxygen atom recombination reaction on the surface of the feature based on simulation results obtained using EVOLVE, a physically based low pressure simulator. We then use film profiles inside features to estimate the oxygen atom flux to the water surface and the kinetic parameters used in the rate expressions for the deposition reaction and the oxygen atom recombination reaction. Results indicate that under the conditions of our experiments, the thermally activated oxygen atom recombination reaction on the growing silicon dioxide surface is second order in oxygen atoms. This recombination reaction consumes reactive oxygen and leads to gradients in oxygen atom flux in the feature. Because this surface reaction is thermally activated, the magnitude of the gradient increases as the water surface is increased, which results in significant degradation of step coverage.

Original languageEnglish (US)
Pages (from-to)977-983
Number of pages7
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume14
Issue number3
StatePublished - May 1996

Fingerprint

Plasma enhanced chemical vapor deposition
Silicon Dioxide
oxygen atoms
recombination reactions
Silica
Microwaves
vapor deposition
Oxygen
silicon dioxide
microwaves
Atoms
simulation
surface water
oxygen
gradients
kinetics
surface reactions
Fluxes
simulators
tetraethoxysilane

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Physics and Astronomy (miscellaneous)
  • Surfaces and Interfaces

Cite this

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title = "Feature scale simulation studies of TEOS-sourced remote microwave plasma-enhanced chemical vapor deposition of silicon dioxide: Role of oxygen atom recombination",
abstract = "Experimental data and feature scale simulations are combined to test a kinetic model proposed for remote microwave plasma-enhanced chemical vapor deposition (RμPECVD) of silicon dioxide from tetraethylorthosilicate (TEOS) and oxygen. The constitutive relationships used are refinements of those developed for the direct capacitively coupled rf PECVD of SiO2, using TEOS and oxygen. We discriminate between a first order and a second order oxygen atom recombination reaction on the surface of the feature based on simulation results obtained using EVOLVE, a physically based low pressure simulator. We then use film profiles inside features to estimate the oxygen atom flux to the water surface and the kinetic parameters used in the rate expressions for the deposition reaction and the oxygen atom recombination reaction. Results indicate that under the conditions of our experiments, the thermally activated oxygen atom recombination reaction on the growing silicon dioxide surface is second order in oxygen atoms. This recombination reaction consumes reactive oxygen and leads to gradients in oxygen atom flux in the feature. Because this surface reaction is thermally activated, the magnitude of the gradient increases as the water surface is increased, which results in significant degradation of step coverage.",
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T1 - Feature scale simulation studies of TEOS-sourced remote microwave plasma-enhanced chemical vapor deposition of silicon dioxide

T2 - Role of oxygen atom recombination

AU - Virmani, Moneth

AU - Levedakis, Dimitri A.

AU - Raupp, Gregory

AU - Cale, Timothy S.

PY - 1996/5

Y1 - 1996/5

N2 - Experimental data and feature scale simulations are combined to test a kinetic model proposed for remote microwave plasma-enhanced chemical vapor deposition (RμPECVD) of silicon dioxide from tetraethylorthosilicate (TEOS) and oxygen. The constitutive relationships used are refinements of those developed for the direct capacitively coupled rf PECVD of SiO2, using TEOS and oxygen. We discriminate between a first order and a second order oxygen atom recombination reaction on the surface of the feature based on simulation results obtained using EVOLVE, a physically based low pressure simulator. We then use film profiles inside features to estimate the oxygen atom flux to the water surface and the kinetic parameters used in the rate expressions for the deposition reaction and the oxygen atom recombination reaction. Results indicate that under the conditions of our experiments, the thermally activated oxygen atom recombination reaction on the growing silicon dioxide surface is second order in oxygen atoms. This recombination reaction consumes reactive oxygen and leads to gradients in oxygen atom flux in the feature. Because this surface reaction is thermally activated, the magnitude of the gradient increases as the water surface is increased, which results in significant degradation of step coverage.

AB - Experimental data and feature scale simulations are combined to test a kinetic model proposed for remote microwave plasma-enhanced chemical vapor deposition (RμPECVD) of silicon dioxide from tetraethylorthosilicate (TEOS) and oxygen. The constitutive relationships used are refinements of those developed for the direct capacitively coupled rf PECVD of SiO2, using TEOS and oxygen. We discriminate between a first order and a second order oxygen atom recombination reaction on the surface of the feature based on simulation results obtained using EVOLVE, a physically based low pressure simulator. We then use film profiles inside features to estimate the oxygen atom flux to the water surface and the kinetic parameters used in the rate expressions for the deposition reaction and the oxygen atom recombination reaction. Results indicate that under the conditions of our experiments, the thermally activated oxygen atom recombination reaction on the growing silicon dioxide surface is second order in oxygen atoms. This recombination reaction consumes reactive oxygen and leads to gradients in oxygen atom flux in the feature. Because this surface reaction is thermally activated, the magnitude of the gradient increases as the water surface is increased, which results in significant degradation of step coverage.

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