Feasibility study of ion-cut InP photoconductor devices on glass substrates

Wayne Chen, Arthur Zhang, Peng Chen, John E. Pulsifer, Terry Alford, Thomas F. Kuech, Silvanus S. Lau

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

Photoconductive devices, prefabricated on semi-insulating InP, were integrated on glass substrates using hydrogen-induced layer transfer (ion-cut) combined with adhesive bonding. The prefabricated photodetectors were implanted through by hydrogen ions and transferred twice to achieve device-up configuration. The transferred devices exhibited both higher photocurrent and dark current when compared with bulk devices. Transient response measurement showed a long-lived tail that persisted after the initial "fast" response, indicative of trapmediated transport due to the implant-related localized states. Our study showed that the ion-cutting layer transfer process yielded functional photodetectors. The residual defects remain a challenging issue for the ion-cut process.

Original languageEnglish (US)
Article number022201
JournalApplied Physics Express
Volume2
Issue number2
DOIs
StatePublished - Feb 1 2009

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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    Chen, W., Zhang, A., Chen, P., Pulsifer, J. E., Alford, T., Kuech, T. F., & Lau, S. S. (2009). Feasibility study of ion-cut InP photoconductor devices on glass substrates. Applied Physics Express, 2(2), [022201]. https://doi.org/10.1143/APEX.2.022201