Faulted surface layers in dysprosium silicide nanowires

Zhian He; David Smith; Peter Bennett

doi:10.1103/PhysRevB.70.241402

Faulted surface layers in dysprosium silicide nanowires

Zhian He, David Smith, Peter Bennett

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

The crystallography and microstructure of epitaxial dysprosium suicide nanowires on Si(001) have been studied using high-resolution transmission electron microscopy. Islands grown at 750°C have a compact three-dimensional shape and are identified as hexagonal DySi₂. Islands grown at 650°C have an elongated nanowire (NW) shape. They contain one or two layers of hexagonal silicide at the buried interface and two to three surface layers with faulted stacking similar to tetragonal DySi₂. The faulted layers are believed to provide stress relief during growth of the coherently strained NW islands.

Original language	English (US)
Article number	241402
Pages (from-to)	1-4
Number of pages	4
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	70
Issue number	24
DOIs	https://doi.org/10.1103/PhysRevB.70.241402
State	Published - Dec 2004

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.70.241402

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title = "Faulted surface layers in dysprosium silicide nanowires",

abstract = "The crystallography and microstructure of epitaxial dysprosium suicide nanowires on Si(001) have been studied using high-resolution transmission electron microscopy. Islands grown at 750°C have a compact three-dimensional shape and are identified as hexagonal DySi2. Islands grown at 650°C have an elongated nanowire (NW) shape. They contain one or two layers of hexagonal silicide at the buried interface and two to three surface layers with faulted stacking similar to tetragonal DySi2. The faulted layers are believed to provide stress relief during growth of the coherently strained NW islands.",

author = "Zhian He and David Smith and Peter Bennett",

note = "Funding Information: This work was supported by NSF Grant Nos. DMR9981779 and ECS0304682(NIRT). We acknowledge use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.",

year = "2004",

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doi = "10.1103/PhysRevB.70.241402",

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AU - He, Zhian

AU - Smith, David

AU - Bennett, Peter

N1 - Funding Information: This work was supported by NSF Grant Nos. DMR9981779 and ECS0304682(NIRT). We acknowledge use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.

PY - 2004/12

Y1 - 2004/12

N2 - The crystallography and microstructure of epitaxial dysprosium suicide nanowires on Si(001) have been studied using high-resolution transmission electron microscopy. Islands grown at 750°C have a compact three-dimensional shape and are identified as hexagonal DySi2. Islands grown at 650°C have an elongated nanowire (NW) shape. They contain one or two layers of hexagonal silicide at the buried interface and two to three surface layers with faulted stacking similar to tetragonal DySi2. The faulted layers are believed to provide stress relief during growth of the coherently strained NW islands.

AB - The crystallography and microstructure of epitaxial dysprosium suicide nanowires on Si(001) have been studied using high-resolution transmission electron microscopy. Islands grown at 750°C have a compact three-dimensional shape and are identified as hexagonal DySi2. Islands grown at 650°C have an elongated nanowire (NW) shape. They contain one or two layers of hexagonal silicide at the buried interface and two to three surface layers with faulted stacking similar to tetragonal DySi2. The faulted layers are believed to provide stress relief during growth of the coherently strained NW islands.

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Faulted surface layers in dysprosium silicide nanowires

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