Faulted surface layers in dysprosium silicide nanowires

Research output: Contribution to journalArticle

24 Scopus citations


The crystallography and microstructure of epitaxial dysprosium suicide nanowires on Si(001) have been studied using high-resolution transmission electron microscopy. Islands grown at 750°C have a compact three-dimensional shape and are identified as hexagonal DySi2. Islands grown at 650°C have an elongated nanowire (NW) shape. They contain one or two layers of hexagonal silicide at the buried interface and two to three surface layers with faulted stacking similar to tetragonal DySi2. The faulted layers are believed to provide stress relief during growth of the coherently strained NW islands.

Original languageEnglish (US)
Pages (from-to)1-4
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number24
StatePublished - Dec 1 2004


ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this