Faulted surface layers in dysprosium silicide nanowires

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

The crystallography and microstructure of epitaxial dysprosium suicide nanowires on Si(001) have been studied using high-resolution transmission electron microscopy. Islands grown at 750°C have a compact three-dimensional shape and are identified as hexagonal DySi2. Islands grown at 650°C have an elongated nanowire (NW) shape. They contain one or two layers of hexagonal silicide at the buried interface and two to three surface layers with faulted stacking similar to tetragonal DySi2. The faulted layers are believed to provide stress relief during growth of the coherently strained NW islands.

Original languageEnglish (US)
Pages (from-to)1-4
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume70
Issue number24
DOIs
StatePublished - Dec 2004

Fingerprint

Dysprosium
dysprosium
Nanowires
surface layers
nanowires
Stress relief
Crystallography
High resolution transmission electron microscopy
crystallography
transmission electron microscopy
microstructure
Microstructure
high resolution

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Faulted surface layers in dysprosium silicide nanowires. / He, Zhian; Smith, David; Bennett, Peter.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 70, No. 24, 12.2004, p. 1-4.

Research output: Contribution to journalArticle

@article{75e26c2402d84c83ac860742aec6962d,
title = "Faulted surface layers in dysprosium silicide nanowires",
abstract = "The crystallography and microstructure of epitaxial dysprosium suicide nanowires on Si(001) have been studied using high-resolution transmission electron microscopy. Islands grown at 750°C have a compact three-dimensional shape and are identified as hexagonal DySi2. Islands grown at 650°C have an elongated nanowire (NW) shape. They contain one or two layers of hexagonal silicide at the buried interface and two to three surface layers with faulted stacking similar to tetragonal DySi2. The faulted layers are believed to provide stress relief during growth of the coherently strained NW islands.",
author = "Zhian He and David Smith and Peter Bennett",
year = "2004",
month = "12",
doi = "10.1103/PhysRevB.70.241402",
language = "English (US)",
volume = "70",
pages = "1--4",
journal = "Physical Review B-Condensed Matter",
issn = "0163-1829",
publisher = "American Institute of Physics Publising LLC",
number = "24",

}

TY - JOUR

T1 - Faulted surface layers in dysprosium silicide nanowires

AU - He, Zhian

AU - Smith, David

AU - Bennett, Peter

PY - 2004/12

Y1 - 2004/12

N2 - The crystallography and microstructure of epitaxial dysprosium suicide nanowires on Si(001) have been studied using high-resolution transmission electron microscopy. Islands grown at 750°C have a compact three-dimensional shape and are identified as hexagonal DySi2. Islands grown at 650°C have an elongated nanowire (NW) shape. They contain one or two layers of hexagonal silicide at the buried interface and two to three surface layers with faulted stacking similar to tetragonal DySi2. The faulted layers are believed to provide stress relief during growth of the coherently strained NW islands.

AB - The crystallography and microstructure of epitaxial dysprosium suicide nanowires on Si(001) have been studied using high-resolution transmission electron microscopy. Islands grown at 750°C have a compact three-dimensional shape and are identified as hexagonal DySi2. Islands grown at 650°C have an elongated nanowire (NW) shape. They contain one or two layers of hexagonal silicide at the buried interface and two to three surface layers with faulted stacking similar to tetragonal DySi2. The faulted layers are believed to provide stress relief during growth of the coherently strained NW islands.

UR - http://www.scopus.com/inward/record.url?scp=14944370524&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=14944370524&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.70.241402

DO - 10.1103/PhysRevB.70.241402

M3 - Article

VL - 70

SP - 1

EP - 4

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 0163-1829

IS - 24

ER -