Fault-free silicon at the silicon/sapphire interface

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Abstract

High-quality lattice images of silicon films grown epitaxially on sapphire substrates directly demonstrate the absence of misfit dislocations at the silicon/sapphire interface. With a point resolution of about 2.5 Å, these images show the absence of lattice faults and detectable strains in the silicon immediately adjacent to the subtrate over interface areas as large as 200 nm in diameter. The incoherent nature of the interface and the absence of misfit dislocations are explained in terms of the chemical bond structure at the interface.

Original languageEnglish (US)
Pages (from-to)371-373
Number of pages3
JournalApplied Physics Letters
Volume41
Issue number4
DOIs
StatePublished - Dec 1 1982

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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