Fast Full-Band Device Simulator for Wurtzite and Zincblende GaN MESFET Using a Cellular Monte Carlo Method

Shinya Yamakawa, Shela Aboud, Marco Saraniti, Stephen Goodnick

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A fast full-band device simulator for wurtzite and zincblende GaN using a Cellular Monte Carlo (CMC) approach is reported for wurtzite and zincblende GaN. The full-phonon dispersion relationship including anisotropic polar-optical phonon scattering is taken into account for the wurtzite GaN calculation. In the bulk simulation, the CMC model is about 30–100 times faster than the conventional Ensemble Monte Carlo model at high electric field region. This CMC model is applied to the simulator of MESFET devices, and the calculation speed is significantly improved.

Original languageEnglish (US)
Pages (from-to)481-485
Number of pages5
JournalJournal of Computational Electronics
Volume2
Issue number2-4
DOIs
StatePublished - Dec 1 2003

Fingerprint

zincblende
wurtzite
Monte Carlo method
simulators
Simulator
Monte Carlo methods
field effect transistors
Simulators
Phonon
MESFET devices
Phonon scattering
Electric fields
Electric Field
Ensemble
electric fields
Scattering
Model
scattering
simulation
Simulation

Keywords

  • cellular Monte Carlo
  • device simulation
  • ensemble Monte Carlo
  • MESFET
  • transport modeling

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Modeling and Simulation
  • Electrical and Electronic Engineering

Cite this

Fast Full-Band Device Simulator for Wurtzite and Zincblende GaN MESFET Using a Cellular Monte Carlo Method. / Yamakawa, Shinya; Aboud, Shela; Saraniti, Marco; Goodnick, Stephen.

In: Journal of Computational Electronics, Vol. 2, No. 2-4, 01.12.2003, p. 481-485.

Research output: Contribution to journalArticle

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