Fast energy relaxation of hot carriers near the dirac point of graphene

R. Somphonsane, H. Ramamoorthy, G. Bohra, G. He, D. K. Ferry, Y. Ochiai, N. Aoki, J. P. Bird

Research output: Contribution to journalArticle

22 Scopus citations

Abstract

We investigate energy relaxation of hot carriers in monolayer and bilayer graphene devices, demonstrating that the relaxation rate increases significantly as the Dirac point is approached from either the conduction or valence band. This counterintuitive behavior appears consistent with ideas of charge puddling under disorder, suggesting that it becomes very difficult to excite carriers out of these localized regions. These results therefore demonstrate how the peculiar properties of graphene extend also to the behavior of its nonequilibrium carriers.

Original languageEnglish (US)
Pages (from-to)4305-4310
Number of pages6
JournalNano Letters
Volume13
Issue number9
DOIs
StatePublished - Sep 11 2013

Keywords

  • Graphene
  • electron-phonon scattering
  • energy relaxation
  • hot carriers

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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  • Cite this

    Somphonsane, R., Ramamoorthy, H., Bohra, G., He, G., Ferry, D. K., Ochiai, Y., Aoki, N., & Bird, J. P. (2013). Fast energy relaxation of hot carriers near the dirac point of graphene. Nano Letters, 13(9), 4305-4310. https://doi.org/10.1021/nl4020777