Far-infrared detector based on HgTe/HgCdTe superlattices

Y. D. Zhou; C. R. Becker; Y. Selamet; Y. Chang; R. Ashokan; R. T. Boreiko; T. Aoki; David Smith; A. L. Betz; S. Sivananthan

doi:10.1007/s11664-003-0040-3

Far-infrared detector based on HgTe/HgCdTe superlattices

Y. D. Zhou, C. R. Becker, Y. Selamet, Y. Chang, R. Ashokan, R. T. Boreiko, T. Aoki, David Smith, A. L. Betz, S. Sivananthan

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

HgTe/Hg_0.05Cd_0.95Te superlattices (SLs) were grown on (112)B oriented Cd_0.96Zn_0.04Te substrates using molecular beam epitaxy (MBE). The SLs, consisting of 100 periods of 80-Å-thick HgTe wells alternating with 77-Å-thick Hg_0.05Cd_0.95Te barriers, were designed to operate as detectors in the far-infrared (FIR) region. Infrared absorption spectroscopy, high-resolution transmission electron microscopy (TEM), Hall effect measurements, and x-ray diffraction were used to characterize the superlattice layers. A series of annealing experiments were initiated to quantify the temperature-dependent interdiffusion of the HgTe wells and Hg_0.05Cd_0.95Te barriers and consequently their degradation, which shifts the absorption edges of the SLs to higher energies, since a high-temperature ex situ anneal is normally required in order to produce the p-type material required for a photovoltaic detector. Results from infrared absorption spectroscopy, TEM, and Hall effect measurements for the annealed samples are presented. A FIR SLs single-element photoconductive (PC) device was designed and fabricated. Both material characterization and device testing have established the applicability of the HgTe/Hg_0.05Cd_0.95Te SLs for the FIR region.

Original language	English (US)
Pages (from-to)	608-614
Number of pages	7
Journal	Journal of Electronic Materials
Volume	32
Issue number	7
DOIs	https://doi.org/10.1007/s11664-003-0040-3
State	Published - Jul 2003

Keywords

Annealing
Far-infrared
HgTe/HgCdTe superlattice
Infrared detector
MBE

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-003-0040-3

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@article{88abe3ee405945f3880a4a308fc7fdf7,

title = "Far-infrared detector based on HgTe/HgCdTe superlattices",

abstract = "HgTe/Hg0.05Cd0.95Te superlattices (SLs) were grown on (112)B oriented Cd0.96Zn0.04Te substrates using molecular beam epitaxy (MBE). The SLs, consisting of 100 periods of 80-{\AA}-thick HgTe wells alternating with 77-{\AA}-thick Hg0.05Cd0.95Te barriers, were designed to operate as detectors in the far-infrared (FIR) region. Infrared absorption spectroscopy, high-resolution transmission electron microscopy (TEM), Hall effect measurements, and x-ray diffraction were used to characterize the superlattice layers. A series of annealing experiments were initiated to quantify the temperature-dependent interdiffusion of the HgTe wells and Hg0.05Cd0.95Te barriers and consequently their degradation, which shifts the absorption edges of the SLs to higher energies, since a high-temperature ex situ anneal is normally required in order to produce the p-type material required for a photovoltaic detector. Results from infrared absorption spectroscopy, TEM, and Hall effect measurements for the annealed samples are presented. A FIR SLs single-element photoconductive (PC) device was designed and fabricated. Both material characterization and device testing have established the applicability of the HgTe/Hg0.05Cd0.95Te SLs for the FIR region.",

keywords = "Annealing, Far-infrared, HgTe/HgCdTe superlattice, Infrared detector, MBE",

author = "Zhou, {Y. D.} and Becker, {C. R.} and Y. Selamet and Y. Chang and R. Ashokan and Boreiko, {R. T.} and T. Aoki and David Smith and Betz, {A. L.} and S. Sivananthan",

note = "Funding Information: This work is supported by NASA Grant No. NAG5-10213. We acknowledge the use of the facilities in the Center for High Resolution Electron Microscopy at Arizona State University.",

year = "2003",

month = jul,

doi = "10.1007/s11664-003-0040-3",

language = "English (US)",

volume = "32",

pages = "608--614",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "7",

}

TY - JOUR

T1 - Far-infrared detector based on HgTe/HgCdTe superlattices

AU - Zhou, Y. D.

AU - Becker, C. R.

AU - Selamet, Y.

AU - Chang, Y.

AU - Ashokan, R.

AU - Boreiko, R. T.

AU - Aoki, T.

AU - Smith, David

AU - Betz, A. L.

AU - Sivananthan, S.

N1 - Funding Information: This work is supported by NASA Grant No. NAG5-10213. We acknowledge the use of the facilities in the Center for High Resolution Electron Microscopy at Arizona State University.

PY - 2003/7

Y1 - 2003/7

N2 - HgTe/Hg0.05Cd0.95Te superlattices (SLs) were grown on (112)B oriented Cd0.96Zn0.04Te substrates using molecular beam epitaxy (MBE). The SLs, consisting of 100 periods of 80-Å-thick HgTe wells alternating with 77-Å-thick Hg0.05Cd0.95Te barriers, were designed to operate as detectors in the far-infrared (FIR) region. Infrared absorption spectroscopy, high-resolution transmission electron microscopy (TEM), Hall effect measurements, and x-ray diffraction were used to characterize the superlattice layers. A series of annealing experiments were initiated to quantify the temperature-dependent interdiffusion of the HgTe wells and Hg0.05Cd0.95Te barriers and consequently their degradation, which shifts the absorption edges of the SLs to higher energies, since a high-temperature ex situ anneal is normally required in order to produce the p-type material required for a photovoltaic detector. Results from infrared absorption spectroscopy, TEM, and Hall effect measurements for the annealed samples are presented. A FIR SLs single-element photoconductive (PC) device was designed and fabricated. Both material characterization and device testing have established the applicability of the HgTe/Hg0.05Cd0.95Te SLs for the FIR region.

AB - HgTe/Hg0.05Cd0.95Te superlattices (SLs) were grown on (112)B oriented Cd0.96Zn0.04Te substrates using molecular beam epitaxy (MBE). The SLs, consisting of 100 periods of 80-Å-thick HgTe wells alternating with 77-Å-thick Hg0.05Cd0.95Te barriers, were designed to operate as detectors in the far-infrared (FIR) region. Infrared absorption spectroscopy, high-resolution transmission electron microscopy (TEM), Hall effect measurements, and x-ray diffraction were used to characterize the superlattice layers. A series of annealing experiments were initiated to quantify the temperature-dependent interdiffusion of the HgTe wells and Hg0.05Cd0.95Te barriers and consequently their degradation, which shifts the absorption edges of the SLs to higher energies, since a high-temperature ex situ anneal is normally required in order to produce the p-type material required for a photovoltaic detector. Results from infrared absorption spectroscopy, TEM, and Hall effect measurements for the annealed samples are presented. A FIR SLs single-element photoconductive (PC) device was designed and fabricated. Both material characterization and device testing have established the applicability of the HgTe/Hg0.05Cd0.95Te SLs for the FIR region.

KW - Annealing

KW - Far-infrared

KW - HgTe/HgCdTe superlattice

KW - Infrared detector

KW - MBE

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U2 - 10.1007/s11664-003-0040-3

DO - 10.1007/s11664-003-0040-3

M3 - Article

AN - SCOPUS:0043269256

SN - 0361-5235

VL - 32

SP - 608

EP - 614

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 7

ER -

Far-infrared detector based on HgTe/HgCdTe superlattices

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