Far-infrared detector based on HgTe/HgCdTe superlattices

Y. D. Zhou, C. R. Becker, Y. Selamet, Y. Chang, R. Ashokan, R. T. Boreiko, T. Aoki, David Smith, A. L. Betz, S. Sivananthan

Research output: Contribution to journalArticlepeer-review

23 Scopus citations

Abstract

HgTe/Hg0.05Cd0.95Te superlattices (SLs) were grown on (112)B oriented Cd0.96Zn0.04Te substrates using molecular beam epitaxy (MBE). The SLs, consisting of 100 periods of 80-Å-thick HgTe wells alternating with 77-Å-thick Hg0.05Cd0.95Te barriers, were designed to operate as detectors in the far-infrared (FIR) region. Infrared absorption spectroscopy, high-resolution transmission electron microscopy (TEM), Hall effect measurements, and x-ray diffraction were used to characterize the superlattice layers. A series of annealing experiments were initiated to quantify the temperature-dependent interdiffusion of the HgTe wells and Hg0.05Cd0.95Te barriers and consequently their degradation, which shifts the absorption edges of the SLs to higher energies, since a high-temperature ex situ anneal is normally required in order to produce the p-type material required for a photovoltaic detector. Results from infrared absorption spectroscopy, TEM, and Hall effect measurements for the annealed samples are presented. A FIR SLs single-element photoconductive (PC) device was designed and fabricated. Both material characterization and device testing have established the applicability of the HgTe/Hg0.05Cd0.95Te SLs for the FIR region.

Original languageEnglish (US)
Pages (from-to)608-614
Number of pages7
JournalJournal of Electronic Materials
Volume32
Issue number7
DOIs
StatePublished - Jul 2003

Keywords

  • Annealing
  • Far-infrared
  • HgTe/HgCdTe superlattice
  • Infrared detector
  • MBE

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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