Abstract

With the growing interest to explore Jupiter’s moons, technologies with +10 Mrad(Si) tolerance are now needed, to survive the Jovian environment. Conductive bridging random access memory (CBRAM) is a non-volatile memory that has shown a high tolerance to total ionizing dose (TID). However, it is not well understood how CBRAM behaves in an energetic ion environment where displacement damage effects may also be an issue. In this work, the response of CBRAM to 100-keV Li, 1-MeV Ta, and 200-keV Si ion irradiations are examined. Ion bombardment was performed with increasing fluence steps until the CBRAM devices failed to hold their programmed state. The TID and displacement damage dose (DDD) at the fluence of failure was calculated and compared against tested ion species. Results indicate that failures are more highly correlated to TID than DDD. DC cycling tests were performed during 100-keV Li irradiations and evidence was found that the mobile Ag ion supply diminished with increasing fluence. The cycling results, in addition to prior 14-MeV neutron work, suggest that displacement damage may play a role in the eventual failure of a CBRAM device in a combined radiation environment.

Original languageEnglish (US)
JournalIEEE Transactions on Nuclear Science
DOIs
StateAccepted/In press - Jan 1 2018

Fingerprint

random access memory
damage
Data storage equipment
dosage
thresholds
fluence
Ion bombardment
ions
Ions
cycles
natural satellites
ion irradiation
Jupiter (planet)
Moon
bombardment
direct current
Neutrons
neutrons
irradiation
Irradiation

Keywords

  • CBRAM
  • chalcogenide glass
  • conductive bridging
  • displacement damage
  • dose effects
  • electrochemical metallization
  • ionizing radiation
  • Ions
  • memristors
  • nanoionic memory
  • Performance evaluation
  • Programming
  • Radiation effects
  • radiation effects
  • Resistance
  • Silicon
  • Testing
  • TID

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

Failure Thresholds in CBRAM Due to Total Ionizing Dose and Displacement Damage Effects. / Taggart, J. L.; Jacobs-Gedrim, R. B.; McLain, M. L.; Barnaby, Hugh; Bielejec, E. S.; Hardy, W.; Marinella, M. J.; Kozicki, Michael; Holbert, Keith.

In: IEEE Transactions on Nuclear Science, 01.01.2018.

Research output: Contribution to journalArticle

Taggart, J. L. ; Jacobs-Gedrim, R. B. ; McLain, M. L. ; Barnaby, Hugh ; Bielejec, E. S. ; Hardy, W. ; Marinella, M. J. ; Kozicki, Michael ; Holbert, Keith. / Failure Thresholds in CBRAM Due to Total Ionizing Dose and Displacement Damage Effects. In: IEEE Transactions on Nuclear Science. 2018.
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