TY - GEN
T1 - Failure analysis of design qualification testing
T2 - 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
AU - TamizhMani, G.
AU - Li, B.
AU - Arends, T.
AU - Kuitche, J.
AU - Raghuraman, B.
AU - Shisler, W.
AU - Farnsworth, K.
AU - Gonzales, J.
AU - Voropayev, A.
AU - Symanski, P.
PY - 2008/12/1
Y1 - 2008/12/1
N2 - The design/performance qualification testing is a set of well-defined accelerated stress tests with strict pass/fail criteria. ASU-PTL is an ISO 17025 accredited testing laboratory and has been providing photovoltaic testing services since 1992. This paper presents a failure analysis on the design qualification testing of both crystalline silicon (c-Si) and thin-film technologies for two consecutive periods: 1997-2005 2005-2007. In the first period, the industry was growing at a slower rate with traditional manufacturers and the qualification testing of c-Si technologies was primarily conducted per Edition 1 of IEC 61215 standard. In the second period, the industry was growing at an explosive rate with new manufacturers joining the traditional manufacturers and the qualification testing of c-Si was primarily conducted per Edition 2 of IEC 61215. Similar failure analysis according to IEC 61646 has been carried out for the thin-film technologies as well. The failure analysis of the test results presented in this paper indicates a large increase in the failure rates for both c-Si and thin-film technologies during the period of 2005-2007.
AB - The design/performance qualification testing is a set of well-defined accelerated stress tests with strict pass/fail criteria. ASU-PTL is an ISO 17025 accredited testing laboratory and has been providing photovoltaic testing services since 1992. This paper presents a failure analysis on the design qualification testing of both crystalline silicon (c-Si) and thin-film technologies for two consecutive periods: 1997-2005 2005-2007. In the first period, the industry was growing at a slower rate with traditional manufacturers and the qualification testing of c-Si technologies was primarily conducted per Edition 1 of IEC 61215 standard. In the second period, the industry was growing at an explosive rate with new manufacturers joining the traditional manufacturers and the qualification testing of c-Si was primarily conducted per Edition 2 of IEC 61215. Similar failure analysis according to IEC 61646 has been carried out for the thin-film technologies as well. The failure analysis of the test results presented in this paper indicates a large increase in the failure rates for both c-Si and thin-film technologies during the period of 2005-2007.
UR - http://www.scopus.com/inward/record.url?scp=84879714288&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84879714288&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2008.4922768
DO - 10.1109/PVSC.2008.4922768
M3 - Conference contribution
AN - SCOPUS:84879714288
SN - 9781424416417
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
BT - 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
Y2 - 11 May 2008 through 16 May 2008
ER -