Abstract
Dual charge pump data show a reduction of circuit output voltage with dose. Through testing of individual process monitors, the response is identified as parasitic interdevice leakage caused by trapped oxide charge buildup in the isolation oxide. A library of compact models is generated for the field oxide parasitic based on test structure data along with 2-D structure simulation results. The charge pump schematic is then back annotated with transistors representative of the parasitic at different dose levels. Inclusion of the parasitic devices in schematic allows for simulation of the entire circuit at a specific dose. The reduction of circuit output with dose is then re-created in simulation.
| Original language | English (US) |
|---|---|
| Article number | 5658007 |
| Pages (from-to) | 3609-3614 |
| Number of pages | 6 |
| Journal | IEEE Transactions on Nuclear Science |
| Volume | 57 |
| Issue number | 6 PART 1 |
| DOIs | |
| State | Published - Dec 2010 |
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Keywords
- Charge pump
- interdevice leakage
- LOCOS
- oxide trapped charge
- radiation
- total ionizing dose
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Nuclear Energy and Engineering
- Nuclear and High Energy Physics
Cite this
Failure analysis and radiation-enabled circuit simulation of a dual charge pump circuit. / Schlenvogt, Garrett James; Barnaby, Hugh; Esqueda, Ivan S.; Holbert, Keith; Wilkinson, Jeff; Morrison, Scott; Tyler, Larry.
In: IEEE Transactions on Nuclear Science, Vol. 57, No. 6 PART 1, 5658007, 12.2010, p. 3609-3614.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Failure analysis and radiation-enabled circuit simulation of a dual charge pump circuit
AU - Schlenvogt, Garrett James
AU - Barnaby, Hugh
AU - Esqueda, Ivan S.
AU - Holbert, Keith
AU - Wilkinson, Jeff
AU - Morrison, Scott
AU - Tyler, Larry
PY - 2010/12
Y1 - 2010/12
N2 - Dual charge pump data show a reduction of circuit output voltage with dose. Through testing of individual process monitors, the response is identified as parasitic interdevice leakage caused by trapped oxide charge buildup in the isolation oxide. A library of compact models is generated for the field oxide parasitic based on test structure data along with 2-D structure simulation results. The charge pump schematic is then back annotated with transistors representative of the parasitic at different dose levels. Inclusion of the parasitic devices in schematic allows for simulation of the entire circuit at a specific dose. The reduction of circuit output with dose is then re-created in simulation.
AB - Dual charge pump data show a reduction of circuit output voltage with dose. Through testing of individual process monitors, the response is identified as parasitic interdevice leakage caused by trapped oxide charge buildup in the isolation oxide. A library of compact models is generated for the field oxide parasitic based on test structure data along with 2-D structure simulation results. The charge pump schematic is then back annotated with transistors representative of the parasitic at different dose levels. Inclusion of the parasitic devices in schematic allows for simulation of the entire circuit at a specific dose. The reduction of circuit output with dose is then re-created in simulation.
KW - Charge pump
KW - interdevice leakage
KW - LOCOS
KW - oxide trapped charge
KW - radiation
KW - total ionizing dose
UR - http://www.scopus.com/inward/record.url?scp=78650362470&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=78650362470&partnerID=8YFLogxK
U2 - 10.1109/TNS.2010.2079951
DO - 10.1109/TNS.2010.2079951
M3 - Article
AN - SCOPUS:78650362470
VL - 57
SP - 3609
EP - 3614
JO - IEEE Transactions on Nuclear Science
JF - IEEE Transactions on Nuclear Science
SN - 0018-9499
IS - 6 PART 1
M1 - 5658007
ER -