Failure analysis and radiation-enabled circuit simulation of a dual charge pump circuit

Garrett James Schlenvogt, Hugh Barnaby, Ivan S. Esqueda, Keith Holbert, Jeff Wilkinson, Scott Morrison, Larry Tyler

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Dual charge pump data show a reduction of circuit output voltage with dose. Through testing of individual process monitors, the response is identified as parasitic interdevice leakage caused by trapped oxide charge buildup in the isolation oxide. A library of compact models is generated for the field oxide parasitic based on test structure data along with 2-D structure simulation results. The charge pump schematic is then back annotated with transistors representative of the parasitic at different dose levels. Inclusion of the parasitic devices in schematic allows for simulation of the entire circuit at a specific dose. The reduction of circuit output with dose is then re-created in simulation.

Original languageEnglish (US)
Article number5658007
Pages (from-to)3609-3614
Number of pages6
JournalIEEE Transactions on Nuclear Science
Volume57
Issue number6 PART 1
DOIs
StatePublished - Dec 2010

Fingerprint

Charge pump circuits
failure analysis
Circuit simulation
Failure analysis
Schematic diagrams
pumps
Radiation
dosage
Oxides
Networks (circuits)
circuit diagrams
radiation
Pumps
oxides
simulation
data structures
output
Transistors
monitors
isolation

Keywords

  • Charge pump
  • interdevice leakage
  • LOCOS
  • oxide trapped charge
  • radiation
  • total ionizing dose

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Nuclear Energy and Engineering
  • Nuclear and High Energy Physics

Cite this

Failure analysis and radiation-enabled circuit simulation of a dual charge pump circuit. / Schlenvogt, Garrett James; Barnaby, Hugh; Esqueda, Ivan S.; Holbert, Keith; Wilkinson, Jeff; Morrison, Scott; Tyler, Larry.

In: IEEE Transactions on Nuclear Science, Vol. 57, No. 6 PART 1, 5658007, 12.2010, p. 3609-3614.

Research output: Contribution to journalArticle

Schlenvogt, GJ, Barnaby, H, Esqueda, IS, Holbert, K, Wilkinson, J, Morrison, S & Tyler, L 2010, 'Failure analysis and radiation-enabled circuit simulation of a dual charge pump circuit', IEEE Transactions on Nuclear Science, vol. 57, no. 6 PART 1, 5658007, pp. 3609-3614. https://doi.org/10.1109/TNS.2010.2079951
Schlenvogt, Garrett James ; Barnaby, Hugh ; Esqueda, Ivan S. ; Holbert, Keith ; Wilkinson, Jeff ; Morrison, Scott ; Tyler, Larry. / Failure analysis and radiation-enabled circuit simulation of a dual charge pump circuit. In: IEEE Transactions on Nuclear Science. 2010 ; Vol. 57, No. 6 PART 1. pp. 3609-3614.
@article{bc443afda0324e47973909fde4fb443e,
title = "Failure analysis and radiation-enabled circuit simulation of a dual charge pump circuit",
abstract = "Dual charge pump data show a reduction of circuit output voltage with dose. Through testing of individual process monitors, the response is identified as parasitic interdevice leakage caused by trapped oxide charge buildup in the isolation oxide. A library of compact models is generated for the field oxide parasitic based on test structure data along with 2-D structure simulation results. The charge pump schematic is then back annotated with transistors representative of the parasitic at different dose levels. Inclusion of the parasitic devices in schematic allows for simulation of the entire circuit at a specific dose. The reduction of circuit output with dose is then re-created in simulation.",
keywords = "Charge pump, interdevice leakage, LOCOS, oxide trapped charge, radiation, total ionizing dose",
author = "Schlenvogt, {Garrett James} and Hugh Barnaby and Esqueda, {Ivan S.} and Keith Holbert and Jeff Wilkinson and Scott Morrison and Larry Tyler",
year = "2010",
month = "12",
doi = "10.1109/TNS.2010.2079951",
language = "English (US)",
volume = "57",
pages = "3609--3614",
journal = "IEEE Transactions on Nuclear Science",
issn = "0018-9499",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6 PART 1",

}

TY - JOUR

T1 - Failure analysis and radiation-enabled circuit simulation of a dual charge pump circuit

AU - Schlenvogt, Garrett James

AU - Barnaby, Hugh

AU - Esqueda, Ivan S.

AU - Holbert, Keith

AU - Wilkinson, Jeff

AU - Morrison, Scott

AU - Tyler, Larry

PY - 2010/12

Y1 - 2010/12

N2 - Dual charge pump data show a reduction of circuit output voltage with dose. Through testing of individual process monitors, the response is identified as parasitic interdevice leakage caused by trapped oxide charge buildup in the isolation oxide. A library of compact models is generated for the field oxide parasitic based on test structure data along with 2-D structure simulation results. The charge pump schematic is then back annotated with transistors representative of the parasitic at different dose levels. Inclusion of the parasitic devices in schematic allows for simulation of the entire circuit at a specific dose. The reduction of circuit output with dose is then re-created in simulation.

AB - Dual charge pump data show a reduction of circuit output voltage with dose. Through testing of individual process monitors, the response is identified as parasitic interdevice leakage caused by trapped oxide charge buildup in the isolation oxide. A library of compact models is generated for the field oxide parasitic based on test structure data along with 2-D structure simulation results. The charge pump schematic is then back annotated with transistors representative of the parasitic at different dose levels. Inclusion of the parasitic devices in schematic allows for simulation of the entire circuit at a specific dose. The reduction of circuit output with dose is then re-created in simulation.

KW - Charge pump

KW - interdevice leakage

KW - LOCOS

KW - oxide trapped charge

KW - radiation

KW - total ionizing dose

UR - http://www.scopus.com/inward/record.url?scp=78650362470&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78650362470&partnerID=8YFLogxK

U2 - 10.1109/TNS.2010.2079951

DO - 10.1109/TNS.2010.2079951

M3 - Article

AN - SCOPUS:78650362470

VL - 57

SP - 3609

EP - 3614

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

SN - 0018-9499

IS - 6 PART 1

M1 - 5658007

ER -