Fabrication of ultra-short gate MESFETs and BlochFETS by electron beam lithography

G. Bernstein, D. K. Ferry

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

We have used electron beam lithography in single level PMMA to investigate both ultra-submicron gate MESFETs and a novel quantum device called a BlochFET. From d.c. transconductance (gm) measurements of MESFETs with gate lengths from 35 to 65 nm, our data indicate a rise in gm below 50 nm which we attribute to the onset of velocity overshoot. The BlochFETs and HEMTs whose gates are replaced by a lateral surface superlattice grid structure. These grids are composed of 40 nm lines on 170 nm pitch. We have observed negative differential conductance which may be due to Bloch oscillation effects at low temperatures and believe this to be the first such observation yet reported.

Original languageEnglish (US)
Pages (from-to)373-376
Number of pages4
JournalSuperlattices and Microstructures
Volume2
Issue number4
DOIs
StatePublished - 1986

Fingerprint

Electron beam lithography
Transconductance
Polymethyl Methacrylate
High electron mobility transistors
field effect transistors
lithography
electron beams
Fabrication
fabrication
grids
transconductance
high electron mobility transistors
Temperature
oscillations

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Fabrication of ultra-short gate MESFETs and BlochFETS by electron beam lithography. / Bernstein, G.; Ferry, D. K.

In: Superlattices and Microstructures, Vol. 2, No. 4, 1986, p. 373-376.

Research output: Contribution to journalArticle

@article{ea72833e38d843ba838c3b6d80ec63a8,
title = "Fabrication of ultra-short gate MESFETs and BlochFETS by electron beam lithography",
abstract = "We have used electron beam lithography in single level PMMA to investigate both ultra-submicron gate MESFETs and a novel quantum device called a BlochFET. From d.c. transconductance (gm) measurements of MESFETs with gate lengths from 35 to 65 nm, our data indicate a rise in gm below 50 nm which we attribute to the onset of velocity overshoot. The BlochFETs and HEMTs whose gates are replaced by a lateral surface superlattice grid structure. These grids are composed of 40 nm lines on 170 nm pitch. We have observed negative differential conductance which may be due to Bloch oscillation effects at low temperatures and believe this to be the first such observation yet reported.",
author = "G. Bernstein and Ferry, {D. K.}",
year = "1986",
doi = "10.1016/0749-6036(86)90050-9",
language = "English (US)",
volume = "2",
pages = "373--376",
journal = "Superlattices and Microstructures",
issn = "0749-6036",
publisher = "Academic Press Inc.",
number = "4",

}

TY - JOUR

T1 - Fabrication of ultra-short gate MESFETs and BlochFETS by electron beam lithography

AU - Bernstein, G.

AU - Ferry, D. K.

PY - 1986

Y1 - 1986

N2 - We have used electron beam lithography in single level PMMA to investigate both ultra-submicron gate MESFETs and a novel quantum device called a BlochFET. From d.c. transconductance (gm) measurements of MESFETs with gate lengths from 35 to 65 nm, our data indicate a rise in gm below 50 nm which we attribute to the onset of velocity overshoot. The BlochFETs and HEMTs whose gates are replaced by a lateral surface superlattice grid structure. These grids are composed of 40 nm lines on 170 nm pitch. We have observed negative differential conductance which may be due to Bloch oscillation effects at low temperatures and believe this to be the first such observation yet reported.

AB - We have used electron beam lithography in single level PMMA to investigate both ultra-submicron gate MESFETs and a novel quantum device called a BlochFET. From d.c. transconductance (gm) measurements of MESFETs with gate lengths from 35 to 65 nm, our data indicate a rise in gm below 50 nm which we attribute to the onset of velocity overshoot. The BlochFETs and HEMTs whose gates are replaced by a lateral surface superlattice grid structure. These grids are composed of 40 nm lines on 170 nm pitch. We have observed negative differential conductance which may be due to Bloch oscillation effects at low temperatures and believe this to be the first such observation yet reported.

UR - http://www.scopus.com/inward/record.url?scp=0022909455&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022909455&partnerID=8YFLogxK

U2 - 10.1016/0749-6036(86)90050-9

DO - 10.1016/0749-6036(86)90050-9

M3 - Article

AN - SCOPUS:0022909455

VL - 2

SP - 373

EP - 376

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

SN - 0749-6036

IS - 4

ER -