Fabrication of ultra-short gate MESFETs and BlochFETS by electron beam lithography

G. Bernstein; D. K. Ferry

doi:10.1016/0749-6036(86)90050-9

Fabrication of ultra-short gate MESFETs and BlochFETS by electron beam lithography

G. Bernstein, D. K. Ferry

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

We have used electron beam lithography in single level PMMA to investigate both ultra-submicron gate MESFETs and a novel quantum device called a BlochFET. From d.c. transconductance (g_m) measurements of MESFETs with gate lengths from 35 to 65 nm, our data indicate a rise in g_m below 50 nm which we attribute to the onset of velocity overshoot. The BlochFETs and HEMTs whose gates are replaced by a lateral surface superlattice grid structure. These grids are composed of 40 nm lines on 170 nm pitch. We have observed negative differential conductance which may be due to Bloch oscillation effects at low temperatures and believe this to be the first such observation yet reported.

Original language	English (US)
Pages (from-to)	373-376
Number of pages	4
Journal	Superlattices and Microstructures
Volume	2
Issue number	4
DOIs	https://doi.org/10.1016/0749-6036(86)90050-9
State	Published - 1986

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/0749-6036(86)90050-9

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title = "Fabrication of ultra-short gate MESFETs and BlochFETS by electron beam lithography",

abstract = "We have used electron beam lithography in single level PMMA to investigate both ultra-submicron gate MESFETs and a novel quantum device called a BlochFET. From d.c. transconductance (gm) measurements of MESFETs with gate lengths from 35 to 65 nm, our data indicate a rise in gm below 50 nm which we attribute to the onset of velocity overshoot. The BlochFETs and HEMTs whose gates are replaced by a lateral surface superlattice grid structure. These grids are composed of 40 nm lines on 170 nm pitch. We have observed negative differential conductance which may be due to Bloch oscillation effects at low temperatures and believe this to be the first such observation yet reported.",

author = "G. Bernstein and Ferry, {D. K.}",

note = "Funding Information: The authors thank Jim Comas at the Naval Research Laboratory as well as Charlie Cook and Tom AuCoin of the Electronics Technology and Devices Laboratory at Fort Monmouth for advice and materials. This work was supported by the Office of Naval Research. Copyright: Copyright 2014 Elsevier B.V., All rights reserved.",

year = "1986",

doi = "10.1016/0749-6036(86)90050-9",

language = "English (US)",

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journal = "Superlattices and Microstructures",

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T1 - Fabrication of ultra-short gate MESFETs and BlochFETS by electron beam lithography

AU - Bernstein, G.

AU - Ferry, D. K.

N1 - Funding Information: The authors thank Jim Comas at the Naval Research Laboratory as well as Charlie Cook and Tom AuCoin of the Electronics Technology and Devices Laboratory at Fort Monmouth for advice and materials. This work was supported by the Office of Naval Research. Copyright: Copyright 2014 Elsevier B.V., All rights reserved.

PY - 1986

Y1 - 1986

N2 - We have used electron beam lithography in single level PMMA to investigate both ultra-submicron gate MESFETs and a novel quantum device called a BlochFET. From d.c. transconductance (gm) measurements of MESFETs with gate lengths from 35 to 65 nm, our data indicate a rise in gm below 50 nm which we attribute to the onset of velocity overshoot. The BlochFETs and HEMTs whose gates are replaced by a lateral surface superlattice grid structure. These grids are composed of 40 nm lines on 170 nm pitch. We have observed negative differential conductance which may be due to Bloch oscillation effects at low temperatures and believe this to be the first such observation yet reported.

AB - We have used electron beam lithography in single level PMMA to investigate both ultra-submicron gate MESFETs and a novel quantum device called a BlochFET. From d.c. transconductance (gm) measurements of MESFETs with gate lengths from 35 to 65 nm, our data indicate a rise in gm below 50 nm which we attribute to the onset of velocity overshoot. The BlochFETs and HEMTs whose gates are replaced by a lateral surface superlattice grid structure. These grids are composed of 40 nm lines on 170 nm pitch. We have observed negative differential conductance which may be due to Bloch oscillation effects at low temperatures and believe this to be the first such observation yet reported.

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Fabrication of ultra-short gate MESFETs and BlochFETS by electron beam lithography

Abstract

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