Fabrication of silicon-on-SiO 2/diamondlike-carbon dual insulator using ion cutting and mitigation of self-heating effects

Zengfeng Di, Paul K. Chu, Ming Zhu, Ricky K Y Fu, Suhua Luo, Lin Shao, M. Nastasi, Peng Chen, Terry Alford, J. W. Mayer, Miao Zhang, Weili Liu, Zhitang Song, Chenglu Lin

Research output: Contribution to journalArticle

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Abstract

A diamondlike-carbon (DLC) layer was used to substitute for the buried Si O2 layer in silicon on insulator (SOI) to mitigate the self-heating effects in our previous study. However, we discovered drawbacks associated with the inferior Si/DLC interface, inadequate thermal stability as well as carbon-silicon interdiffusion at the Si/DLC interface that could hamper future application of this silicon-on-diamond structure to microelectronic devices. In this work, we introduced a silicon dioxide barrier layer between the Si film and DLC buried layer to form a silicon-on- Si O2 DLC dual-insulator structure to tackle these problems. Cross-sectional high-resolution transmission electron microscopy reveals that the Si/insulator interface is atomically flat and the top Si layer has nearly perfect crystalline quality. The Si O2 DLC dual-insulator layer retains excellent insulating properties at typical complementary metal oxide silicon processing temperatures. Numerical simulation reveals that the negative differential resistance and channel temperature are significantly reduced compared with those of the same metal oxide semiconductor field effect transistors fabricated in conventional Si O2 -based SOI, suggesting that the silicon-on-dual-insulator structure can alleviate the self-heating penalty effectively.

Original languageEnglish (US)
Article number142108
JournalApplied Physics Letters
Volume88
Issue number14
DOIs
StatePublished - Apr 3 2006

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insulators
fabrication
heating
carbon
silicon
ions
interface stability
barrier layers
penalties
metal oxide semiconductors
microelectronics
metal oxides
thermal stability
field effect transistors
diamonds
substitutes
silicon dioxide
transmission electron microscopy
temperature
high resolution

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Fabrication of silicon-on-SiO 2/diamondlike-carbon dual insulator using ion cutting and mitigation of self-heating effects. / Di, Zengfeng; Chu, Paul K.; Zhu, Ming; Fu, Ricky K Y; Luo, Suhua; Shao, Lin; Nastasi, M.; Chen, Peng; Alford, Terry; Mayer, J. W.; Zhang, Miao; Liu, Weili; Song, Zhitang; Lin, Chenglu.

In: Applied Physics Letters, Vol. 88, No. 14, 142108, 03.04.2006.

Research output: Contribution to journalArticle

Di, Z, Chu, PK, Zhu, M, Fu, RKY, Luo, S, Shao, L, Nastasi, M, Chen, P, Alford, T, Mayer, JW, Zhang, M, Liu, W, Song, Z & Lin, C 2006, 'Fabrication of silicon-on-SiO 2/diamondlike-carbon dual insulator using ion cutting and mitigation of self-heating effects', Applied Physics Letters, vol. 88, no. 14, 142108. https://doi.org/10.1063/1.2192981
Di, Zengfeng ; Chu, Paul K. ; Zhu, Ming ; Fu, Ricky K Y ; Luo, Suhua ; Shao, Lin ; Nastasi, M. ; Chen, Peng ; Alford, Terry ; Mayer, J. W. ; Zhang, Miao ; Liu, Weili ; Song, Zhitang ; Lin, Chenglu. / Fabrication of silicon-on-SiO 2/diamondlike-carbon dual insulator using ion cutting and mitigation of self-heating effects. In: Applied Physics Letters. 2006 ; Vol. 88, No. 14.
@article{07ba2931a74c494299971358e0806b04,
title = "Fabrication of silicon-on-SiO 2/diamondlike-carbon dual insulator using ion cutting and mitigation of self-heating effects",
abstract = "A diamondlike-carbon (DLC) layer was used to substitute for the buried Si O2 layer in silicon on insulator (SOI) to mitigate the self-heating effects in our previous study. However, we discovered drawbacks associated with the inferior Si/DLC interface, inadequate thermal stability as well as carbon-silicon interdiffusion at the Si/DLC interface that could hamper future application of this silicon-on-diamond structure to microelectronic devices. In this work, we introduced a silicon dioxide barrier layer between the Si film and DLC buried layer to form a silicon-on- Si O2 DLC dual-insulator structure to tackle these problems. Cross-sectional high-resolution transmission electron microscopy reveals that the Si/insulator interface is atomically flat and the top Si layer has nearly perfect crystalline quality. The Si O2 DLC dual-insulator layer retains excellent insulating properties at typical complementary metal oxide silicon processing temperatures. Numerical simulation reveals that the negative differential resistance and channel temperature are significantly reduced compared with those of the same metal oxide semiconductor field effect transistors fabricated in conventional Si O2 -based SOI, suggesting that the silicon-on-dual-insulator structure can alleviate the self-heating penalty effectively.",
author = "Zengfeng Di and Chu, {Paul K.} and Ming Zhu and Fu, {Ricky K Y} and Suhua Luo and Lin Shao and M. Nastasi and Peng Chen and Terry Alford and Mayer, {J. W.} and Miao Zhang and Weili Liu and Zhitang Song and Chenglu Lin",
year = "2006",
month = "4",
day = "3",
doi = "10.1063/1.2192981",
language = "English (US)",
volume = "88",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "14",

}

TY - JOUR

T1 - Fabrication of silicon-on-SiO 2/diamondlike-carbon dual insulator using ion cutting and mitigation of self-heating effects

AU - Di, Zengfeng

AU - Chu, Paul K.

AU - Zhu, Ming

AU - Fu, Ricky K Y

AU - Luo, Suhua

AU - Shao, Lin

AU - Nastasi, M.

AU - Chen, Peng

AU - Alford, Terry

AU - Mayer, J. W.

AU - Zhang, Miao

AU - Liu, Weili

AU - Song, Zhitang

AU - Lin, Chenglu

PY - 2006/4/3

Y1 - 2006/4/3

N2 - A diamondlike-carbon (DLC) layer was used to substitute for the buried Si O2 layer in silicon on insulator (SOI) to mitigate the self-heating effects in our previous study. However, we discovered drawbacks associated with the inferior Si/DLC interface, inadequate thermal stability as well as carbon-silicon interdiffusion at the Si/DLC interface that could hamper future application of this silicon-on-diamond structure to microelectronic devices. In this work, we introduced a silicon dioxide barrier layer between the Si film and DLC buried layer to form a silicon-on- Si O2 DLC dual-insulator structure to tackle these problems. Cross-sectional high-resolution transmission electron microscopy reveals that the Si/insulator interface is atomically flat and the top Si layer has nearly perfect crystalline quality. The Si O2 DLC dual-insulator layer retains excellent insulating properties at typical complementary metal oxide silicon processing temperatures. Numerical simulation reveals that the negative differential resistance and channel temperature are significantly reduced compared with those of the same metal oxide semiconductor field effect transistors fabricated in conventional Si O2 -based SOI, suggesting that the silicon-on-dual-insulator structure can alleviate the self-heating penalty effectively.

AB - A diamondlike-carbon (DLC) layer was used to substitute for the buried Si O2 layer in silicon on insulator (SOI) to mitigate the self-heating effects in our previous study. However, we discovered drawbacks associated with the inferior Si/DLC interface, inadequate thermal stability as well as carbon-silicon interdiffusion at the Si/DLC interface that could hamper future application of this silicon-on-diamond structure to microelectronic devices. In this work, we introduced a silicon dioxide barrier layer between the Si film and DLC buried layer to form a silicon-on- Si O2 DLC dual-insulator structure to tackle these problems. Cross-sectional high-resolution transmission electron microscopy reveals that the Si/insulator interface is atomically flat and the top Si layer has nearly perfect crystalline quality. The Si O2 DLC dual-insulator layer retains excellent insulating properties at typical complementary metal oxide silicon processing temperatures. Numerical simulation reveals that the negative differential resistance and channel temperature are significantly reduced compared with those of the same metal oxide semiconductor field effect transistors fabricated in conventional Si O2 -based SOI, suggesting that the silicon-on-dual-insulator structure can alleviate the self-heating penalty effectively.

UR - http://www.scopus.com/inward/record.url?scp=33646707083&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33646707083&partnerID=8YFLogxK

U2 - 10.1063/1.2192981

DO - 10.1063/1.2192981

M3 - Article

AN - SCOPUS:33646707083

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 14

M1 - 142108

ER -