TY - JOUR
T1 - Fabrication of periodic silicon nanopillars in a two-dimensional hexagonal array with enhanced control on structural dimension and period
AU - Choi, Jea Young
AU - Alford, Terry
AU - Honsberg, Christiana
N1 - Publisher Copyright:
© 2015 American Chemical Society.
PY - 2015/3/17
Y1 - 2015/3/17
N2 - We present a method to fabricate well-controlled periodic silicon nanopillars (Si NPs) in hexagonal arrays using silica nanosphere (SNS) lithography (SNL) combined with metal-assisted chemical etching (MaCE). The period of the Si NPs is easily changed by using our silica nanosphere (SNS) spin-coating process, which provides excellent monolayer uniformity and coverage (>95%) over large surface areas. The size of the deposited SNS is adjusted by reactive ion etching (RIE) to produce a target diameter at a fixed period for control of the surface pattern size after a gold metal mask layer deposition. The Si NPs are etched with the MaCE technique following introduction of a Ni interfacial layer between the Si and Au catalyst layer for adhesion and improved lithographical accuracy. The result is a fast, convenient, and large-area applicable Si surface nanolithography technique for accurate and reproducible Si NP fabrication.
AB - We present a method to fabricate well-controlled periodic silicon nanopillars (Si NPs) in hexagonal arrays using silica nanosphere (SNS) lithography (SNL) combined with metal-assisted chemical etching (MaCE). The period of the Si NPs is easily changed by using our silica nanosphere (SNS) spin-coating process, which provides excellent monolayer uniformity and coverage (>95%) over large surface areas. The size of the deposited SNS is adjusted by reactive ion etching (RIE) to produce a target diameter at a fixed period for control of the surface pattern size after a gold metal mask layer deposition. The Si NPs are etched with the MaCE technique following introduction of a Ni interfacial layer between the Si and Au catalyst layer for adhesion and improved lithographical accuracy. The result is a fast, convenient, and large-area applicable Si surface nanolithography technique for accurate and reproducible Si NP fabrication.
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U2 - 10.1021/acs.langmuir.5b00128
DO - 10.1021/acs.langmuir.5b00128
M3 - Article
AN - SCOPUS:84926443523
SN - 0743-7463
VL - 31
SP - 4018
EP - 4023
JO - Langmuir
JF - Langmuir
IS - 13
ER -