Fabrication of niobium titanium nitride thin films with high superconducting transition temperatures and short penetration lengths

Lei Yu; Rakesh Singh; Hongxue Liu; Stephen Y. Wu; Roger Hu; D. Durand; John Bulman; John M. Rowell; Nathan Newman

doi:10.1109/TASC.2005.844126

Fabrication of niobium titanium nitride thin films with high superconducting transition temperatures and short penetration lengths

Lei Yu, Rakesh Singh, Hongxue Liu, Stephen Y. Wu, Roger Hu, D. Durand, John Bulman, John M. Rowell, Nathan Newman

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

We report a systematic study of the superconducting and normal state properties of reactively sputtered Nb_0.62Ti_0.38N thin films deposited on thermally oxidized Si wafers. The superconducting transition temperature (T_c) was found to increase from 12 K for films prepared on unheated substrates to over 16 K for films prepared on substrates maintained at 450°C. A Nb buffer layer was found to improve T_c by ∼0.5 K for growths at lower substrate temperatures. The films fabricated at 450°C have an amply smooth surface (1.5 ± 0.25 nm root mean square roughness), a sufficiently high T_c, and sufficiently small penetration depth (200 ± 20 nm at 10 K) to be useful as ground planes and electrodes for current-generation 10 K rapid single-flux quantum circuit technology.

Original language	English (US)
Pages (from-to)	44-47
Number of pages	4
Journal	IEEE Transactions on Applied Superconductivity
Volume	15
Issue number	1
DOIs	https://doi.org/10.1109/TASC.2005.844126
State	Published - Mar 2005

Keywords

Coherence length
Low-temperature superconductors
Niobium nitride (NbN)
Niobium titanium nitride (NbTiN)
Penetration depth
Thin film

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/TASC.2005.844126

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title = "Fabrication of niobium titanium nitride thin films with high superconducting transition temperatures and short penetration lengths",

abstract = "We report a systematic study of the superconducting and normal state properties of reactively sputtered Nb0.62Ti0.38N thin films deposited on thermally oxidized Si wafers. The superconducting transition temperature (Tc) was found to increase from 12 K for films prepared on unheated substrates to over 16 K for films prepared on substrates maintained at 450°C. A Nb buffer layer was found to improve Tc by ∼0.5 K for growths at lower substrate temperatures. The films fabricated at 450°C have an amply smooth surface (1.5 ± 0.25 nm root mean square roughness), a sufficiently high Tc, and sufficiently small penetration depth (200 ± 20 nm at 10 K) to be useful as ground planes and electrodes for current-generation 10 K rapid single-flux quantum circuit technology.",

keywords = "Coherence length, Low-temperature superconductors, Niobium nitride (NbN), Niobium titanium nitride (NbTiN), Penetration depth, Thin film",

author = "Lei Yu and Rakesh Singh and Hongxue Liu and Wu, {Stephen Y.} and Roger Hu and D. Durand and John Bulman and Rowell, {John M.} and Nathan Newman",

note = "Funding Information: Manuscript received August 4, 2004; revised November 5, 2004. This paper was recommended by Associate Editor M. Mueck. This work was supported by the Office of Naval Research under Contract N00014-01-1-0047 at Arizona State University. L. Yu is with the Department of Electrical Engineering, Arizona State Uni-vesity, Tempe, AZ 85287-6006 USA (e-mail: Lei.Yu@asu.edu). R. K. Singh, H. Liu, S. Y. Wu, J. M. Rowell, and N. Newman are with the Department of Chemical and Materials Engineering, Arizona State University, Tempe, AZ 85287-6006 USA (e-mail: Nathan.Newman@ asu.edu). R. Hu and D. Durand are with the Northrop Grumman Corporation, Redondo Beach, CA 90278 USA. J. Bulman is with the Physics Department of Loyola Marymount University, Los Angeles, CA 90045 USA. Digital Object Identifier 10.1109/TASC.2005.844126",

year = "2005",

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doi = "10.1109/TASC.2005.844126",

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journal = "IEEE Transactions on Applied Superconductivity",

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T1 - Fabrication of niobium titanium nitride thin films with high superconducting transition temperatures and short penetration lengths

AU - Yu, Lei

AU - Singh, Rakesh

AU - Liu, Hongxue

AU - Wu, Stephen Y.

AU - Hu, Roger

AU - Durand, D.

AU - Bulman, John

AU - Rowell, John M.

AU - Newman, Nathan

N1 - Funding Information: Manuscript received August 4, 2004; revised November 5, 2004. This paper was recommended by Associate Editor M. Mueck. This work was supported by the Office of Naval Research under Contract N00014-01-1-0047 at Arizona State University. L. Yu is with the Department of Electrical Engineering, Arizona State Uni-vesity, Tempe, AZ 85287-6006 USA (e-mail: Lei.Yu@asu.edu). R. K. Singh, H. Liu, S. Y. Wu, J. M. Rowell, and N. Newman are with the Department of Chemical and Materials Engineering, Arizona State University, Tempe, AZ 85287-6006 USA (e-mail: Nathan.Newman@ asu.edu). R. Hu and D. Durand are with the Northrop Grumman Corporation, Redondo Beach, CA 90278 USA. J. Bulman is with the Physics Department of Loyola Marymount University, Los Angeles, CA 90045 USA. Digital Object Identifier 10.1109/TASC.2005.844126

PY - 2005/3

Y1 - 2005/3

N2 - We report a systematic study of the superconducting and normal state properties of reactively sputtered Nb0.62Ti0.38N thin films deposited on thermally oxidized Si wafers. The superconducting transition temperature (Tc) was found to increase from 12 K for films prepared on unheated substrates to over 16 K for films prepared on substrates maintained at 450°C. A Nb buffer layer was found to improve Tc by ∼0.5 K for growths at lower substrate temperatures. The films fabricated at 450°C have an amply smooth surface (1.5 ± 0.25 nm root mean square roughness), a sufficiently high Tc, and sufficiently small penetration depth (200 ± 20 nm at 10 K) to be useful as ground planes and electrodes for current-generation 10 K rapid single-flux quantum circuit technology.

AB - We report a systematic study of the superconducting and normal state properties of reactively sputtered Nb0.62Ti0.38N thin films deposited on thermally oxidized Si wafers. The superconducting transition temperature (Tc) was found to increase from 12 K for films prepared on unheated substrates to over 16 K for films prepared on substrates maintained at 450°C. A Nb buffer layer was found to improve Tc by ∼0.5 K for growths at lower substrate temperatures. The films fabricated at 450°C have an amply smooth surface (1.5 ± 0.25 nm root mean square roughness), a sufficiently high Tc, and sufficiently small penetration depth (200 ± 20 nm at 10 K) to be useful as ground planes and electrodes for current-generation 10 K rapid single-flux quantum circuit technology.

KW - Coherence length

KW - Low-temperature superconductors

KW - Niobium nitride (NbN)

KW - Niobium titanium nitride (NbTiN)

KW - Penetration depth

KW - Thin film

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JO - IEEE Transactions on Applied Superconductivity

JF - IEEE Transactions on Applied Superconductivity

IS - 1

ER -

Fabrication of niobium titanium nitride thin films with high superconducting transition temperatures and short penetration lengths

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