TY - GEN
T1 - Fabrication of nanopillar structure by silica nanosphere lithography and passivation with wet chemical oxidation cleaning
AU - Kim, Sangpyeong
AU - Bowden, Stuart
AU - Honsberg, Christiana
N1 - Funding Information:
The authors thank to staff in SPL (Solar Power Lab), especially, Bill Dauksher, and CSSER (Center for Solid-State Electronics Research) at Arizona State University. This work was supported by NSF (National Science Foundation) and DOE (Department of Energy) under QESST (Quantum Energy and Sustainable Solar Technologies) grant EEC-1041895.
Publisher Copyright:
© 2017 IEEE.
PY - 2017
Y1 - 2017
N2 - This work focus the fabrication and passivation of Si nanopillar structure. Si nanopillar structures are fabricated by well controlled silica nanosphere lithography with metal assisted chemical etching (MACE). For high quality passivation, nanopillar structures are cleaned using general Si cleaning process with wet oxidation. The wet oxidation process helps to reduce surface state density of nanopillar structure. Nanopillar structure is passivated using several methods as thermal, wet oxide, a-Si:H, organic and aluminum oxide (Al2O3). Al2O3 passivation shows the highest lifetime and implied open circuit voltage (Voc) as 31.9 μs and 595 mV.
AB - This work focus the fabrication and passivation of Si nanopillar structure. Si nanopillar structures are fabricated by well controlled silica nanosphere lithography with metal assisted chemical etching (MACE). For high quality passivation, nanopillar structures are cleaned using general Si cleaning process with wet oxidation. The wet oxidation process helps to reduce surface state density of nanopillar structure. Nanopillar structure is passivated using several methods as thermal, wet oxide, a-Si:H, organic and aluminum oxide (Al2O3). Al2O3 passivation shows the highest lifetime and implied open circuit voltage (Voc) as 31.9 μs and 595 mV.
KW - AlO passivation
KW - Atomic layer deposition
KW - Metal assisted chemical etching
KW - Nanopillar
KW - Silica nanospheres lithography
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U2 - 10.1109/PVSC.2017.8366687
DO - 10.1109/PVSC.2017.8366687
M3 - Conference contribution
AN - SCOPUS:85048462385
T3 - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
SP - 696
EP - 700
BT - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Y2 - 25 June 2017 through 30 June 2017
ER -