Fabrication of nanograined silicon by high-pressure torsion

Yoshifumi Ikoma, Kazunori Hayano, Kaveh Edalati, Katsuhiko Saito, Qixin Guo, Zenji Horita, Toshihiro Aoki, David Smith

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

This paper describes fabrication of Si nanograins through allotropic phase transformation by concurrent application of high pressure and intense straining using high-pressure torsion (HPT). Single-crystalline Si(100) wafers were processed by HPT under a pressure of 24 GPa at room temperature. X-ray diffraction and Raman analysis revealed that the HPT-processed samples were composed of metastable Si-III and Si-XII phases and amorphous phases in addition to the original diamond-cubic Si-I phase. It was found that nanograins formed because the Si-I diamond phase had transformed to high-pressure phases (Si-II, Si-XI, and Si-V) having metallic nature, and it then became easier to generate a high density of dislocations to form grain boundaries. The high-pressure phases were further transformed to the Si-XII and Si-III phases via the Si-II phase upon unloading and they existed as metastable phases at ambient pressure. Subsequent annealing at 873 K gave rise to reverse transformation to Si-I but with nanograin sizes. Although no appreciable photoluminescence (PL) peak was observed from the HPT-processed sample, a broad PL peak centered around 600 nm was detected from the annealed sample due to quantum confinement in the Si-I nanograins.

Original languageEnglish (US)
Pages (from-to)6565-6569
Number of pages5
JournalJournal of Materials Science
Volume49
Issue number19
DOIs
StatePublished - 2014

Fingerprint

Silicon
Torsional stress
Fabrication
Diamond
Diamonds
Photoluminescence
Quantum confinement
Metastable phases
Unloading
Dislocations (crystals)
Grain boundaries
Phase transitions
Annealing
Crystalline materials
X ray diffraction

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Ikoma, Y., Hayano, K., Edalati, K., Saito, K., Guo, Q., Horita, Z., ... Smith, D. (2014). Fabrication of nanograined silicon by high-pressure torsion. Journal of Materials Science, 49(19), 6565-6569. https://doi.org/10.1007/s10853-014-8250-z

Fabrication of nanograined silicon by high-pressure torsion. / Ikoma, Yoshifumi; Hayano, Kazunori; Edalati, Kaveh; Saito, Katsuhiko; Guo, Qixin; Horita, Zenji; Aoki, Toshihiro; Smith, David.

In: Journal of Materials Science, Vol. 49, No. 19, 2014, p. 6565-6569.

Research output: Contribution to journalArticle

Ikoma, Y, Hayano, K, Edalati, K, Saito, K, Guo, Q, Horita, Z, Aoki, T & Smith, D 2014, 'Fabrication of nanograined silicon by high-pressure torsion', Journal of Materials Science, vol. 49, no. 19, pp. 6565-6569. https://doi.org/10.1007/s10853-014-8250-z
Ikoma Y, Hayano K, Edalati K, Saito K, Guo Q, Horita Z et al. Fabrication of nanograined silicon by high-pressure torsion. Journal of Materials Science. 2014;49(19):6565-6569. https://doi.org/10.1007/s10853-014-8250-z
Ikoma, Yoshifumi ; Hayano, Kazunori ; Edalati, Kaveh ; Saito, Katsuhiko ; Guo, Qixin ; Horita, Zenji ; Aoki, Toshihiro ; Smith, David. / Fabrication of nanograined silicon by high-pressure torsion. In: Journal of Materials Science. 2014 ; Vol. 49, No. 19. pp. 6565-6569.
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