Fabrication and opto-electric properties of silicon based heterojunction SIS cells

Bo He, Quan Ma Zhong, Jing Xu, Fei Yun, Ying Hui Tang, Lei Zhao, Nan Sheng Zhang, Feng Li, Cheng Shen, Ling Shen, Xia Jie Meng, Chengy Yue Zhou, Zheng Shan Yu, Yan Ting Yin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

ITO/AZO double films were deposited by RF sputtering on p-Si texturized substrate to fabricate ITO/AZO/SiO2/p-Si SIS heterojunction. The structural, optics and electrical properties of the ITO/AZO films were characterized by UV-VIS spectrophotometer, four point probe, respectively. The results show that ITO/AZO films have good quality. The electrical junction properties were investigated by I-V measurement, which reveals that the heterojunction shows typical good rectifying behavior and great photoelectric effect.

Original languageEnglish (US)
Title of host publication2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Pages2409-2411
Number of pages3
DOIs
StatePublished - 2009
Externally publishedYes
Event2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States
Duration: Jun 7 2009Jun 12 2009

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Country/TerritoryUnited States
CityPhiladelphia, PA
Period6/7/096/12/09

Keywords

  • Al-doped ZnO (AZO)
  • Current-voltage (I-V) characteristics
  • ITO
  • SIS heterojunction
  • Sputtering

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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