Abstract

The authors report fabrication of vertical Schottky diodes using sub-100nm diameter n-type doped Silicon nanopillars. The nanopillars were fabricated using a top-down approach employing the Bosch process. Square-shaped islands of Silicon dioxide patterned using electron beam lithography and deposited by thermal evaporation acted as hard masks for vertical inductively coupled plasma (ICP) etching. Once formed, the nanopillars were conformally covered in a blanket layer of SiO2 and their tips were exposed using Chemical-Mechanical Polishing. Nickel contacts were patterned and deposited on them using DC magnetron sputtering and were annealed to form Nickel silicide forming Schottky diodes with barrier heights between 0.6 and 0.7 eV. We have thus established a low temperature process (no thermal oxide required) for constructing vertical Silicon Schottky diodes with approximately circular cross-sections of diameters from 40nm to 100nm. The ION to I OFF ratio was at least 104. We also observed non-ideal current-voltage characteristics that differentiate these nanoscale diodes from planar Schottky diodes.

Original languageEnglish (US)
Title of host publication2012 IEEE Nanotechnology Materials and Devices Conference, IEEE NMDC 2012
Pages58-62
Number of pages5
DOIs
StatePublished - 2012
Event2012 IEEE Nanotechnology Materials and Devices Conference, IEEE NMDC 2012 - Waikiki Beach, HI, United States
Duration: Oct 16 2012Oct 19 2012

Other

Other2012 IEEE Nanotechnology Materials and Devices Conference, IEEE NMDC 2012
CountryUnited States
CityWaikiki Beach, HI
Period10/16/1210/19/12

Fingerprint

Diodes
Fabrication
Silicon
Nickel
Chemical mechanical polishing
Thermal evaporation
Plasma etching
Electron beam lithography
Inductively coupled plasma
Current voltage characteristics
Magnetron sputtering
Masks
Silica
Oxides
Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Chandra, N., Overvig, A. C., Tracy, C. J., & Goodnick, S. (2012). Fabrication and characterization of vertical silicon nanopillar Schottky diodes. In 2012 IEEE Nanotechnology Materials and Devices Conference, IEEE NMDC 2012 (pp. 58-62). [6527591] https://doi.org/10.1109/NMDC.2012.6527591

Fabrication and characterization of vertical silicon nanopillar Schottky diodes. / Chandra, Nishant; Overvig, Adam C.; Tracy, Clarence J.; Goodnick, Stephen.

2012 IEEE Nanotechnology Materials and Devices Conference, IEEE NMDC 2012. 2012. p. 58-62 6527591.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chandra, N, Overvig, AC, Tracy, CJ & Goodnick, S 2012, Fabrication and characterization of vertical silicon nanopillar Schottky diodes. in 2012 IEEE Nanotechnology Materials and Devices Conference, IEEE NMDC 2012., 6527591, pp. 58-62, 2012 IEEE Nanotechnology Materials and Devices Conference, IEEE NMDC 2012, Waikiki Beach, HI, United States, 10/16/12. https://doi.org/10.1109/NMDC.2012.6527591
Chandra N, Overvig AC, Tracy CJ, Goodnick S. Fabrication and characterization of vertical silicon nanopillar Schottky diodes. In 2012 IEEE Nanotechnology Materials and Devices Conference, IEEE NMDC 2012. 2012. p. 58-62. 6527591 https://doi.org/10.1109/NMDC.2012.6527591
Chandra, Nishant ; Overvig, Adam C. ; Tracy, Clarence J. ; Goodnick, Stephen. / Fabrication and characterization of vertical silicon nanopillar Schottky diodes. 2012 IEEE Nanotechnology Materials and Devices Conference, IEEE NMDC 2012. 2012. pp. 58-62
@inproceedings{e9976a82f66243599b66b2a64a5211f2,
title = "Fabrication and characterization of vertical silicon nanopillar Schottky diodes",
abstract = "The authors report fabrication of vertical Schottky diodes using sub-100nm diameter n-type doped Silicon nanopillars. The nanopillars were fabricated using a top-down approach employing the Bosch process. Square-shaped islands of Silicon dioxide patterned using electron beam lithography and deposited by thermal evaporation acted as hard masks for vertical inductively coupled plasma (ICP) etching. Once formed, the nanopillars were conformally covered in a blanket layer of SiO2 and their tips were exposed using Chemical-Mechanical Polishing. Nickel contacts were patterned and deposited on them using DC magnetron sputtering and were annealed to form Nickel silicide forming Schottky diodes with barrier heights between 0.6 and 0.7 eV. We have thus established a low temperature process (no thermal oxide required) for constructing vertical Silicon Schottky diodes with approximately circular cross-sections of diameters from 40nm to 100nm. The ION to I OFF ratio was at least 104. We also observed non-ideal current-voltage characteristics that differentiate these nanoscale diodes from planar Schottky diodes.",
author = "Nishant Chandra and Overvig, {Adam C.} and Tracy, {Clarence J.} and Stephen Goodnick",
year = "2012",
doi = "10.1109/NMDC.2012.6527591",
language = "English (US)",
isbn = "9781467328708",
pages = "58--62",
booktitle = "2012 IEEE Nanotechnology Materials and Devices Conference, IEEE NMDC 2012",

}

TY - GEN

T1 - Fabrication and characterization of vertical silicon nanopillar Schottky diodes

AU - Chandra, Nishant

AU - Overvig, Adam C.

AU - Tracy, Clarence J.

AU - Goodnick, Stephen

PY - 2012

Y1 - 2012

N2 - The authors report fabrication of vertical Schottky diodes using sub-100nm diameter n-type doped Silicon nanopillars. The nanopillars were fabricated using a top-down approach employing the Bosch process. Square-shaped islands of Silicon dioxide patterned using electron beam lithography and deposited by thermal evaporation acted as hard masks for vertical inductively coupled plasma (ICP) etching. Once formed, the nanopillars were conformally covered in a blanket layer of SiO2 and their tips were exposed using Chemical-Mechanical Polishing. Nickel contacts were patterned and deposited on them using DC magnetron sputtering and were annealed to form Nickel silicide forming Schottky diodes with barrier heights between 0.6 and 0.7 eV. We have thus established a low temperature process (no thermal oxide required) for constructing vertical Silicon Schottky diodes with approximately circular cross-sections of diameters from 40nm to 100nm. The ION to I OFF ratio was at least 104. We also observed non-ideal current-voltage characteristics that differentiate these nanoscale diodes from planar Schottky diodes.

AB - The authors report fabrication of vertical Schottky diodes using sub-100nm diameter n-type doped Silicon nanopillars. The nanopillars were fabricated using a top-down approach employing the Bosch process. Square-shaped islands of Silicon dioxide patterned using electron beam lithography and deposited by thermal evaporation acted as hard masks for vertical inductively coupled plasma (ICP) etching. Once formed, the nanopillars were conformally covered in a blanket layer of SiO2 and their tips were exposed using Chemical-Mechanical Polishing. Nickel contacts were patterned and deposited on them using DC magnetron sputtering and were annealed to form Nickel silicide forming Schottky diodes with barrier heights between 0.6 and 0.7 eV. We have thus established a low temperature process (no thermal oxide required) for constructing vertical Silicon Schottky diodes with approximately circular cross-sections of diameters from 40nm to 100nm. The ION to I OFF ratio was at least 104. We also observed non-ideal current-voltage characteristics that differentiate these nanoscale diodes from planar Schottky diodes.

UR - http://www.scopus.com/inward/record.url?scp=84880110651&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84880110651&partnerID=8YFLogxK

U2 - 10.1109/NMDC.2012.6527591

DO - 10.1109/NMDC.2012.6527591

M3 - Conference contribution

AN - SCOPUS:84880110651

SN - 9781467328708

SP - 58

EP - 62

BT - 2012 IEEE Nanotechnology Materials and Devices Conference, IEEE NMDC 2012

ER -