Fabrication and characterization of p-n homojunctions in cuprous oxide by electrochemical deposition

Longcheng Wang, Meng Tao

Research output: Contribution to journalArticle

128 Scopus citations

Abstract

The conduction type (n- or p-type) of electrochemically deposited cuprous oxide (Cu2 O) can be controlled by solution pH. It was found that cuprous oxides deposited at solution pH below 7.5 are n-type semiconductors, while cuprous oxides deposited at a solution pH above 9.0 are p-type semiconductors. A two-step process was adopted to deposit p-type and n-type cuprous oxides in sequence for the formation of a p-n homojunction in cuprous oxide. Photocurrent and current-voltage measurements demonstrate the successful formation of a p-n homojunction of cuprous oxide.

Original languageEnglish (US)
Pages (from-to)248-250
Number of pages3
JournalElectrochemical and Solid-State Letters
Volume10
Issue number9
DOIs
StatePublished - Aug 1 2007
Externally publishedYes

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ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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