Fabrication and characterization of p-n homojunctions in cuprous oxide by electrochemical deposition

Longcheng Wang; Meng Tao

doi:10.1149/1.2748632

Fabrication and characterization of p-n homojunctions in cuprous oxide by electrochemical deposition

Longcheng Wang, Meng Tao

Research output: Contribution to journal › Article › peer-review

137 Scopus citations

Abstract

The conduction type (n- or p-type) of electrochemically deposited cuprous oxide (Cu2 O) can be controlled by solution pH. It was found that cuprous oxides deposited at solution pH below 7.5 are n-type semiconductors, while cuprous oxides deposited at a solution pH above 9.0 are p-type semiconductors. A two-step process was adopted to deposit p-type and n-type cuprous oxides in sequence for the formation of a p-n homojunction in cuprous oxide. Photocurrent and current-voltage measurements demonstrate the successful formation of a p-n homojunction of cuprous oxide.

Original language	English (US)
Pages (from-to)	248-250
Number of pages	3
Journal	Electrochemical and Solid-State Letters
Volume	10
Issue number	9
DOIs	https://doi.org/10.1149/1.2748632
State	Published - Aug 1 2007
Externally published	Yes

ASJC Scopus subject areas

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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@article{a2ae1962b43a47a29ba312c81a444fce,

title = "Fabrication and characterization of p-n homojunctions in cuprous oxide by electrochemical deposition",

abstract = "The conduction type (n- or p-type) of electrochemically deposited cuprous oxide (Cu2 O) can be controlled by solution pH. It was found that cuprous oxides deposited at solution pH below 7.5 are n-type semiconductors, while cuprous oxides deposited at a solution pH above 9.0 are p-type semiconductors. A two-step process was adopted to deposit p-type and n-type cuprous oxides in sequence for the formation of a p-n homojunction in cuprous oxide. Photocurrent and current-voltage measurements demonstrate the successful formation of a p-n homojunction of cuprous oxide.",

author = "Longcheng Wang and Meng Tao",

year = "2007",

month = aug,

day = "1",

doi = "10.1149/1.2748632",

language = "English (US)",

volume = "10",

pages = "248--250",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society, Inc.",

number = "9",

}

TY - JOUR

T1 - Fabrication and characterization of p-n homojunctions in cuprous oxide by electrochemical deposition

AU - Wang, Longcheng

AU - Tao, Meng

PY - 2007/8/1

Y1 - 2007/8/1

N2 - The conduction type (n- or p-type) of electrochemically deposited cuprous oxide (Cu2 O) can be controlled by solution pH. It was found that cuprous oxides deposited at solution pH below 7.5 are n-type semiconductors, while cuprous oxides deposited at a solution pH above 9.0 are p-type semiconductors. A two-step process was adopted to deposit p-type and n-type cuprous oxides in sequence for the formation of a p-n homojunction in cuprous oxide. Photocurrent and current-voltage measurements demonstrate the successful formation of a p-n homojunction of cuprous oxide.

AB - The conduction type (n- or p-type) of electrochemically deposited cuprous oxide (Cu2 O) can be controlled by solution pH. It was found that cuprous oxides deposited at solution pH below 7.5 are n-type semiconductors, while cuprous oxides deposited at a solution pH above 9.0 are p-type semiconductors. A two-step process was adopted to deposit p-type and n-type cuprous oxides in sequence for the formation of a p-n homojunction in cuprous oxide. Photocurrent and current-voltage measurements demonstrate the successful formation of a p-n homojunction of cuprous oxide.

UR - http://www.scopus.com/inward/record.url?scp=34547210663&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34547210663&partnerID=8YFLogxK

U2 - 10.1149/1.2748632

DO - 10.1149/1.2748632

M3 - Article

AN - SCOPUS:34547210663

VL - 10

SP - 248

EP - 250

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

SN - 1099-0062

IS - 9

ER -

Fabrication and characterization of p-n homojunctions in cuprous oxide by electrochemical deposition

Abstract

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