Fabrication and characterization of p-n homojunctions in cuprous oxide by electrochemical deposition

Longcheng Wang; Meng Tao

doi:10.1149/1.2748632

Fabrication and characterization of p-n homojunctions in cuprous oxide by electrochemical deposition

Longcheng Wang, Meng Tao

Research output: Contribution to journal › Article

128 Scopus citations

Abstract

The conduction type (n- or p-type) of electrochemically deposited cuprous oxide (Cu2 O) can be controlled by solution pH. It was found that cuprous oxides deposited at solution pH below 7.5 are n-type semiconductors, while cuprous oxides deposited at a solution pH above 9.0 are p-type semiconductors. A two-step process was adopted to deposit p-type and n-type cuprous oxides in sequence for the formation of a p-n homojunction in cuprous oxide. Photocurrent and current-voltage measurements demonstrate the successful formation of a p-n homojunction of cuprous oxide.

Original language	English (US)
Pages (from-to)	248-250
Number of pages	3
Journal	Electrochemical and Solid-State Letters
Volume	10
Issue number	9
DOIs	https://doi.org/10.1149/1.2748632
State	Published - Aug 1 2007
Externally published	Yes

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ASJC Scopus subject areas

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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Wang, L., & Tao, M. (2007). Fabrication and characterization of p-n homojunctions in cuprous oxide by electrochemical deposition. Electrochemical and Solid-State Letters, 10(9), 248-250. https://doi.org/10.1149/1.2748632

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AB - The conduction type (n- or p-type) of electrochemically deposited cuprous oxide (Cu2 O) can be controlled by solution pH. It was found that cuprous oxides deposited at solution pH below 7.5 are n-type semiconductors, while cuprous oxides deposited at a solution pH above 9.0 are p-type semiconductors. A two-step process was adopted to deposit p-type and n-type cuprous oxides in sequence for the formation of a p-n homojunction in cuprous oxide. Photocurrent and current-voltage measurements demonstrate the successful formation of a p-n homojunction of cuprous oxide.

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10.1149/1.2748632