Abstract
The conduction type (n- or p-type) of electrochemically deposited cuprous oxide (Cu2 O) can be controlled by solution pH. It was found that cuprous oxides deposited at solution pH below 7.5 are n-type semiconductors, while cuprous oxides deposited at a solution pH above 9.0 are p-type semiconductors. A two-step process was adopted to deposit p-type and n-type cuprous oxides in sequence for the formation of a p-n homojunction in cuprous oxide. Photocurrent and current-voltage measurements demonstrate the successful formation of a p-n homojunction of cuprous oxide.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 248-250 |
| Number of pages | 3 |
| Journal | Electrochemical and Solid-State Letters |
| Volume | 10 |
| Issue number | 9 |
| DOIs | |
| State | Published - Aug 1 2007 |
| Externally published | Yes |
ASJC Scopus subject areas
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrochemistry
- Electrical and Electronic Engineering