Abstract
The conduction type (n- or p-type) of electrochemically deposited cuprous oxide (Cu2 O) can be controlled by solution pH. It was found that cuprous oxides deposited at solution pH below 7.5 are n-type semiconductors, while cuprous oxides deposited at a solution pH above 9.0 are p-type semiconductors. A two-step process was adopted to deposit p-type and n-type cuprous oxides in sequence for the formation of a p-n homojunction in cuprous oxide. Photocurrent and current-voltage measurements demonstrate the successful formation of a p-n homojunction of cuprous oxide.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 248-250 |
| Number of pages | 3 |
| Journal | Electrochemical and Solid-State Letters |
| Volume | 10 |
| Issue number | 9 |
| DOIs | |
| State | Published - 2007 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electrochemistry
- Materials Science(all)
Cite this
Fabrication and characterization of p-n homojunctions in cuprous oxide by electrochemical deposition. / Wang, Longcheng; Tao, Meng.
In: Electrochemical and Solid-State Letters, Vol. 10, No. 9, 2007, p. 248-250.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Fabrication and characterization of p-n homojunctions in cuprous oxide by electrochemical deposition
AU - Wang, Longcheng
AU - Tao, Meng
PY - 2007
Y1 - 2007
N2 - The conduction type (n- or p-type) of electrochemically deposited cuprous oxide (Cu2 O) can be controlled by solution pH. It was found that cuprous oxides deposited at solution pH below 7.5 are n-type semiconductors, while cuprous oxides deposited at a solution pH above 9.0 are p-type semiconductors. A two-step process was adopted to deposit p-type and n-type cuprous oxides in sequence for the formation of a p-n homojunction in cuprous oxide. Photocurrent and current-voltage measurements demonstrate the successful formation of a p-n homojunction of cuprous oxide.
AB - The conduction type (n- or p-type) of electrochemically deposited cuprous oxide (Cu2 O) can be controlled by solution pH. It was found that cuprous oxides deposited at solution pH below 7.5 are n-type semiconductors, while cuprous oxides deposited at a solution pH above 9.0 are p-type semiconductors. A two-step process was adopted to deposit p-type and n-type cuprous oxides in sequence for the formation of a p-n homojunction in cuprous oxide. Photocurrent and current-voltage measurements demonstrate the successful formation of a p-n homojunction of cuprous oxide.
UR - http://www.scopus.com/inward/record.url?scp=34547210663&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=34547210663&partnerID=8YFLogxK
U2 - 10.1149/1.2748632
DO - 10.1149/1.2748632
M3 - Article
VL - 10
SP - 248
EP - 250
JO - Electrochemical and Solid-State Letters
JF - Electrochemical and Solid-State Letters
SN - 1099-0062
IS - 9
ER -