Fabrication and characterization of p-n homojunctions in cuprous oxide by electrochemical deposition

Longcheng Wang, Meng Tao

Research output: Contribution to journalArticle

120 Citations (Scopus)

Abstract

The conduction type (n- or p-type) of electrochemically deposited cuprous oxide (Cu2 O) can be controlled by solution pH. It was found that cuprous oxides deposited at solution pH below 7.5 are n-type semiconductors, while cuprous oxides deposited at a solution pH above 9.0 are p-type semiconductors. A two-step process was adopted to deposit p-type and n-type cuprous oxides in sequence for the formation of a p-n homojunction in cuprous oxide. Photocurrent and current-voltage measurements demonstrate the successful formation of a p-n homojunction of cuprous oxide.

Original languageEnglish (US)
Pages (from-to)248-250
Number of pages3
JournalElectrochemical and Solid-State Letters
Volume10
Issue number9
DOIs
StatePublished - 2007
Externally publishedYes

Fingerprint

homojunctions
Fabrication
fabrication
Oxides
oxides
Semiconductor materials
p-type semiconductors
n-type semiconductors
Voltage measurement
Electric current measurement
Photocurrents
electrical measurement
photocurrents
cuprous oxide
Deposits
deposits
conduction

ASJC Scopus subject areas

  • Electrochemistry
  • Materials Science(all)

Cite this

Fabrication and characterization of p-n homojunctions in cuprous oxide by electrochemical deposition. / Wang, Longcheng; Tao, Meng.

In: Electrochemical and Solid-State Letters, Vol. 10, No. 9, 2007, p. 248-250.

Research output: Contribution to journalArticle

@article{a2ae1962b43a47a29ba312c81a444fce,
title = "Fabrication and characterization of p-n homojunctions in cuprous oxide by electrochemical deposition",
abstract = "The conduction type (n- or p-type) of electrochemically deposited cuprous oxide (Cu2 O) can be controlled by solution pH. It was found that cuprous oxides deposited at solution pH below 7.5 are n-type semiconductors, while cuprous oxides deposited at a solution pH above 9.0 are p-type semiconductors. A two-step process was adopted to deposit p-type and n-type cuprous oxides in sequence for the formation of a p-n homojunction in cuprous oxide. Photocurrent and current-voltage measurements demonstrate the successful formation of a p-n homojunction of cuprous oxide.",
author = "Longcheng Wang and Meng Tao",
year = "2007",
doi = "10.1149/1.2748632",
language = "English (US)",
volume = "10",
pages = "248--250",
journal = "Electrochemical and Solid-State Letters",
issn = "1099-0062",
publisher = "Electrochemical Society, Inc.",
number = "9",

}

TY - JOUR

T1 - Fabrication and characterization of p-n homojunctions in cuprous oxide by electrochemical deposition

AU - Wang, Longcheng

AU - Tao, Meng

PY - 2007

Y1 - 2007

N2 - The conduction type (n- or p-type) of electrochemically deposited cuprous oxide (Cu2 O) can be controlled by solution pH. It was found that cuprous oxides deposited at solution pH below 7.5 are n-type semiconductors, while cuprous oxides deposited at a solution pH above 9.0 are p-type semiconductors. A two-step process was adopted to deposit p-type and n-type cuprous oxides in sequence for the formation of a p-n homojunction in cuprous oxide. Photocurrent and current-voltage measurements demonstrate the successful formation of a p-n homojunction of cuprous oxide.

AB - The conduction type (n- or p-type) of electrochemically deposited cuprous oxide (Cu2 O) can be controlled by solution pH. It was found that cuprous oxides deposited at solution pH below 7.5 are n-type semiconductors, while cuprous oxides deposited at a solution pH above 9.0 are p-type semiconductors. A two-step process was adopted to deposit p-type and n-type cuprous oxides in sequence for the formation of a p-n homojunction in cuprous oxide. Photocurrent and current-voltage measurements demonstrate the successful formation of a p-n homojunction of cuprous oxide.

UR - http://www.scopus.com/inward/record.url?scp=34547210663&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34547210663&partnerID=8YFLogxK

U2 - 10.1149/1.2748632

DO - 10.1149/1.2748632

M3 - Article

VL - 10

SP - 248

EP - 250

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

SN - 1099-0062

IS - 9

ER -