Fabrication and characterization of C implantation standards for Si1-x-yGexCy alloys

T. Laursen, D. Chandrasekhar, Richard Hervig, J. W. Mayer, David Smith, C. Jasper

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Abstract

Characterization and fabrication of quantification standards for carbon implantation in silicon alloys was studied using secondary ion mass spectrometry. Relative sensitivity factors (RSF) for carbon in the alloys having germanium (Ge) compositions in the range from 0 to 0.35 were measured. The thickness of implanted films was measured using high-resolution electron microscopy. Rutherford backscattering spectroscopy was employed to obtain Ge concentrations. The RSF for carbon with respect to silicon and Ge was found to decrease with increase of Ge content.

Original languageEnglish (US)
Pages (from-to)2879-2883
Number of pages5
JournalJournal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
Volume19
Issue number6
DOIs
StatePublished - Nov 1 2001

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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