Fabrication & characterization of Schottky Junction Transistors

Z. Wu, J. Spann, P. C. Jaconelli, J. Yang, Trevor Thornton

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

An analysis of characterization and fabrication of Schottky junction transistors (SJT) was performed. The channel thickness and doping in the proposed device was chosen such that the gate and drain currents vary exponentially with the gate voltage. The d.c. and r.f. measurements of the optimized device were also described. It was found that the channel thickness for the device depends upon the amount of silicon consumed during the silicide reaction.

Original languageEnglish (US)
Title of host publicationIEEE International SOI Conference
Pages73-74
Number of pages2
StatePublished - 2001
Event2001 IEEE International SOI Conference - Durango, CO, United States
Duration: Oct 1 2001Oct 4 2001

Other

Other2001 IEEE International SOI Conference
CountryUnited States
CityDurango, CO
Period10/1/0110/4/01

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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