Extrinsic photoluminescence in coupled-well GaAs/AlGaAs superlattices

Brian Skromme, R. Bhat, M. A. Koza

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Extrinsic luminescence involving residual donor and acceptor impurities in a nominally undoped, coupled-well 80 Å GaAs/20 Å Al0.3Ga0.7As superlattice grown by organomettalic chemical vapor deposition has been investigated. Separate peaks are observed in the luminescence lineshape corresponding to acceptors in the barriers and in the wells, with ionization energies of about 13.5 and 31.9 meV, respectively. The relative amplitudes of the peaks indicate that most of the acceptors are located in the AlGaAs barriers. Varying the temperature from 1.7 to 31 K and the excitation intensity from 0.28 to 1400 mW cm-2 reveals both donor-to-acceptor and miniband-to-acceptor recombination involving each type of acceptor.

Original languageEnglish (US)
Pages (from-to)543-547
Number of pages5
JournalSolid State Communications
Volume66
Issue number5
DOIs
StatePublished - 1988
Externally publishedYes

Fingerprint

Superlattices
aluminum gallium arsenides
superlattices
Luminescence
Photoluminescence
luminescence
photoluminescence
Ionization potential
Chemical vapor deposition
vapor deposition
Impurities
ionization
impurities
excitation
Temperature
temperature
gallium arsenide
energy

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Extrinsic photoluminescence in coupled-well GaAs/AlGaAs superlattices. / Skromme, Brian; Bhat, R.; Koza, M. A.

In: Solid State Communications, Vol. 66, No. 5, 1988, p. 543-547.

Research output: Contribution to journalArticle

@article{31b4e99f11fe46bf84084c8cce5fb6e2,
title = "Extrinsic photoluminescence in coupled-well GaAs/AlGaAs superlattices",
abstract = "Extrinsic luminescence involving residual donor and acceptor impurities in a nominally undoped, coupled-well 80 {\AA} GaAs/20 {\AA} Al0.3Ga0.7As superlattice grown by organomettalic chemical vapor deposition has been investigated. Separate peaks are observed in the luminescence lineshape corresponding to acceptors in the barriers and in the wells, with ionization energies of about 13.5 and 31.9 meV, respectively. The relative amplitudes of the peaks indicate that most of the acceptors are located in the AlGaAs barriers. Varying the temperature from 1.7 to 31 K and the excitation intensity from 0.28 to 1400 mW cm-2 reveals both donor-to-acceptor and miniband-to-acceptor recombination involving each type of acceptor.",
author = "Brian Skromme and R. Bhat and Koza, {M. A.}",
year = "1988",
doi = "10.1016/0038-1098(88)90978-7",
language = "English (US)",
volume = "66",
pages = "543--547",
journal = "Solid State Communications",
issn = "0038-1098",
publisher = "Elsevier Limited",
number = "5",

}

TY - JOUR

T1 - Extrinsic photoluminescence in coupled-well GaAs/AlGaAs superlattices

AU - Skromme, Brian

AU - Bhat, R.

AU - Koza, M. A.

PY - 1988

Y1 - 1988

N2 - Extrinsic luminescence involving residual donor and acceptor impurities in a nominally undoped, coupled-well 80 Å GaAs/20 Å Al0.3Ga0.7As superlattice grown by organomettalic chemical vapor deposition has been investigated. Separate peaks are observed in the luminescence lineshape corresponding to acceptors in the barriers and in the wells, with ionization energies of about 13.5 and 31.9 meV, respectively. The relative amplitudes of the peaks indicate that most of the acceptors are located in the AlGaAs barriers. Varying the temperature from 1.7 to 31 K and the excitation intensity from 0.28 to 1400 mW cm-2 reveals both donor-to-acceptor and miniband-to-acceptor recombination involving each type of acceptor.

AB - Extrinsic luminescence involving residual donor and acceptor impurities in a nominally undoped, coupled-well 80 Å GaAs/20 Å Al0.3Ga0.7As superlattice grown by organomettalic chemical vapor deposition has been investigated. Separate peaks are observed in the luminescence lineshape corresponding to acceptors in the barriers and in the wells, with ionization energies of about 13.5 and 31.9 meV, respectively. The relative amplitudes of the peaks indicate that most of the acceptors are located in the AlGaAs barriers. Varying the temperature from 1.7 to 31 K and the excitation intensity from 0.28 to 1400 mW cm-2 reveals both donor-to-acceptor and miniband-to-acceptor recombination involving each type of acceptor.

UR - http://www.scopus.com/inward/record.url?scp=0024014612&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024014612&partnerID=8YFLogxK

U2 - 10.1016/0038-1098(88)90978-7

DO - 10.1016/0038-1098(88)90978-7

M3 - Article

AN - SCOPUS:0024014612

VL - 66

SP - 543

EP - 547

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

IS - 5

ER -