Extraction of the surface recombination velocity of passivated phosphorus-doped silicon emitters

Andres Cuevas, Gaelle Giroult-Matlakowski, Paul A. Basore, Christiane DuBois, Richard King

Research output: Chapter in Book/Report/Conference proceedingConference contribution

40 Scopus citations

Abstract

An analytical procedure to extract the surface recombination velocity of the SiO2/n-type silicon interface, Sp, from PCD measurements of emitter recombination currents is described. The analysis shows that the extracted values of Sp are significantly affected by the assumed material parameters for highly doped silicon, τp, μp and Δ Eg app. Updated values for these parameters are used to obtain the dependence of Sp on the phosphorus concentration, ND, using both previous and new experimental data. The new evidence supports the finding that Sp increases strongly with ND.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Editors Anon
PublisherIEEE
Pages1446-1449
Number of pages4
Volume2
StatePublished - 1994
Externally publishedYes
EventProceedings of the 24th IEEE Photovoltaic Specialists Conference. Part 2 (of 2) - Waikoloa, HI, USA
Duration: Dec 5 1994Dec 9 1994

Other

OtherProceedings of the 24th IEEE Photovoltaic Specialists Conference. Part 2 (of 2)
CityWaikoloa, HI, USA
Period12/5/9412/9/94

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Condensed Matter Physics

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  • Cite this

    Cuevas, A., Giroult-Matlakowski, G., Basore, P. A., DuBois, C., & King, R. (1994). Extraction of the surface recombination velocity of passivated phosphorus-doped silicon emitters. In Anon (Ed.), Conference Record of the IEEE Photovoltaic Specialists Conference (Vol. 2, pp. 1446-1449). IEEE.