Abstract
A technique to measure the recombination parameter of a-Si/c-Si heterojunction solar cell is described in the work. In this methodology, the experimentally measured inverse lifetime by Sinton lifetime tester is fitted with A+BΔn+CΔn 2 to determine the recombination parameters. The coefficients B and C are radiative and auger recombination coefficient while coefficient A depends on bulk lifetime and surface recombination velocity. The radiative and auger recombination coefficients determined from the work agrees well with previously published results while the surface recombination velocity extracted from coefficient A is typical of well passivated c-Si surface in a-Si/c-Si heterojunction solar cell.
| Original language | English (US) |
|---|---|
| Title of host publication | Conference Record of the IEEE Photovoltaic Specialists Conference |
| Pages | 1429-1432 |
| Number of pages | 4 |
| DOIs | |
| State | Published - 2011 |
| Event | 37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States Duration: Jun 19 2011 → Jun 24 2011 |
Other
| Other | 37th IEEE Photovoltaic Specialists Conference, PVSC 2011 |
|---|---|
| Country | United States |
| City | Seattle, WA |
| Period | 6/19/11 → 6/24/11 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Control and Systems Engineering
- Industrial and Manufacturing Engineering
Cite this
Extraction of recombination parameters of amorphous silicon/crystalline silicon solar cell from lifetime spectroscopy. / Ghosh, Kunal; Ghosh; Song, Nam Kyu; Oh, Min Seok; Kim, Dong Seop; Bowden, Stuart.
Conference Record of the IEEE Photovoltaic Specialists Conference. 2011. p. 1429-1432 6186225.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Extraction of recombination parameters of amorphous silicon/crystalline silicon solar cell from lifetime spectroscopy
AU - Ghosh, Kunal
AU - Ghosh,
AU - Song, Nam Kyu
AU - Oh, Min Seok
AU - Kim, Dong Seop
AU - Bowden, Stuart
PY - 2011
Y1 - 2011
N2 - A technique to measure the recombination parameter of a-Si/c-Si heterojunction solar cell is described in the work. In this methodology, the experimentally measured inverse lifetime by Sinton lifetime tester is fitted with A+BΔn+CΔn 2 to determine the recombination parameters. The coefficients B and C are radiative and auger recombination coefficient while coefficient A depends on bulk lifetime and surface recombination velocity. The radiative and auger recombination coefficients determined from the work agrees well with previously published results while the surface recombination velocity extracted from coefficient A is typical of well passivated c-Si surface in a-Si/c-Si heterojunction solar cell.
AB - A technique to measure the recombination parameter of a-Si/c-Si heterojunction solar cell is described in the work. In this methodology, the experimentally measured inverse lifetime by Sinton lifetime tester is fitted with A+BΔn+CΔn 2 to determine the recombination parameters. The coefficients B and C are radiative and auger recombination coefficient while coefficient A depends on bulk lifetime and surface recombination velocity. The radiative and auger recombination coefficients determined from the work agrees well with previously published results while the surface recombination velocity extracted from coefficient A is typical of well passivated c-Si surface in a-Si/c-Si heterojunction solar cell.
UR - http://www.scopus.com/inward/record.url?scp=84861080130&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84861080130&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2011.6186225
DO - 10.1109/PVSC.2011.6186225
M3 - Conference contribution
AN - SCOPUS:84861080130
SN - 9781424499656
SP - 1429
EP - 1432
BT - Conference Record of the IEEE Photovoltaic Specialists Conference
ER -