Abstract

A high-frequency a high-power GaN HEMT was analyzed using our full band Cellular Monte Carlo (CMC) simulator, in order to extract small signal parameters and figures of merit, and to correlate them to carrier dynamics and distribution inside the device. A complete RF and DC characterization of the device was performed using experimental data to calibrate the few adjustable parameters of the simulator. Then, gate-related capacitances, such as C g, C gd, and C gs, were directly and indirectly extracted combining small-signal analysis and DC characterization.

Original languageEnglish (US)
Pages (from-to)423-430
Number of pages8
JournalInternational Journal of High Speed Electronics and Systems
Volume20
Issue number3
DOIs
StatePublished - Sep 2011

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Capacitance
Simulators
Signal analysis
Monte Carlo simulation
Power HEMT

Keywords

  • GaN
  • gate capacitance
  • HEMTs
  • high-frequency
  • Monte Carlo
  • small-signal parameters

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Hardware and Architecture
  • Electronic, Optical and Magnetic Materials

Cite this

Extraction of gate capacitance of high-frequency and high-power GaN HEMTs by means of cellular Monte Carlo simulations. / Guerra, Diego; Marino, Fabio ALESSIO; Goodnick, Stephen; Ferry, David; Saraniti, Marco.

In: International Journal of High Speed Electronics and Systems, Vol. 20, No. 3, 09.2011, p. 423-430.

Research output: Contribution to journalArticle

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AU - Saraniti, Marco

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KW - Monte Carlo

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