Extraction of gate capacitance of high-frequency and high-power GaN HEMTs by means of cellular Monte Carlo simulations

Diego Guerra; Fabio ALESSIO Marino; Stephen Goodnick; David Ferry; Marco Saraniti

doi:10.1142/S0129156411006714

Extraction of gate capacitance of high-frequency and high-power GaN HEMTs by means of cellular Monte Carlo simulations

Diego Guerra, Fabio ALESSIO Marino, Stephen Goodnick, David Ferry, Marco Saraniti

Research output: Contribution to journal › Article › peer-review

Abstract

A high-frequency a high-power GaN HEMT was analyzed using our full band Cellular Monte Carlo (CMC) simulator, in order to extract small signal parameters and figures of merit, and to correlate them to carrier dynamics and distribution inside the device. A complete RF and DC characterization of the device was performed using experimental data to calibrate the few adjustable parameters of the simulator. Then, gate-related capacitances, such as C _g, C _gd, and C _gs, were directly and indirectly extracted combining small-signal analysis and DC characterization.

Original language	English (US)
Pages (from-to)	423-430
Number of pages	8
Journal	International Journal of High Speed Electronics and Systems
Volume	20
Issue number	3
DOIs	https://doi.org/10.1142/S0129156411006714
State	Published - Sep 1 2011

Keywords

GaN
HEMTs
Monte Carlo
gate capacitance
high-frequency
small-signal parameters

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Hardware and Architecture
Electrical and Electronic Engineering

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abstract = "A high-frequency a high-power GaN HEMT was analyzed using our full band Cellular Monte Carlo (CMC) simulator, in order to extract small signal parameters and figures of merit, and to correlate them to carrier dynamics and distribution inside the device. A complete RF and DC characterization of the device was performed using experimental data to calibrate the few adjustable parameters of the simulator. Then, gate-related capacitances, such as C g, C gd, and C gs, were directly and indirectly extracted combining small-signal analysis and DC characterization.",

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author = "Diego Guerra and Marino, {Fabio ALESSIO} and Stephen Goodnick and David Ferry and Marco Saraniti",

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T1 - Extraction of gate capacitance of high-frequency and high-power GaN HEMTs by means of cellular Monte Carlo simulations

AU - Guerra, Diego

AU - Marino, Fabio ALESSIO

AU - Goodnick, Stephen

AU - Ferry, David

AU - Saraniti, Marco

PY - 2011/9/1

Y1 - 2011/9/1

N2 - A high-frequency a high-power GaN HEMT was analyzed using our full band Cellular Monte Carlo (CMC) simulator, in order to extract small signal parameters and figures of merit, and to correlate them to carrier dynamics and distribution inside the device. A complete RF and DC characterization of the device was performed using experimental data to calibrate the few adjustable parameters of the simulator. Then, gate-related capacitances, such as C g, C gd, and C gs, were directly and indirectly extracted combining small-signal analysis and DC characterization.

AB - A high-frequency a high-power GaN HEMT was analyzed using our full band Cellular Monte Carlo (CMC) simulator, in order to extract small signal parameters and figures of merit, and to correlate them to carrier dynamics and distribution inside the device. A complete RF and DC characterization of the device was performed using experimental data to calibrate the few adjustable parameters of the simulator. Then, gate-related capacitances, such as C g, C gd, and C gs, were directly and indirectly extracted combining small-signal analysis and DC characterization.

KW - GaN

KW - HEMTs

KW - Monte Carlo

KW - gate capacitance

KW - high-frequency

KW - small-signal parameters

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JO - International Journal of High Speed Electronics and Systems

JF - International Journal of High Speed Electronics and Systems

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ER -

Extraction of gate capacitance of high-frequency and high-power GaN HEMTs by means of cellular Monte Carlo simulations

Abstract

Keywords

ASJC Scopus subject areas

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