Extracting the electromechanical coupling constant of piezoelectric thin film by the high-tone bulk acoustic resonator technique

Chong Zhou, Wei Pang, Qiang Li, Hongyu Yu, Xiaotang Hu, Hao Zhang

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

In this paper, a new approach is proposed to rapidly and accurately measure the electromechanical coupling constant K t 2 of thin film piezoelectric material, which is critically important for real-time quality control of the piezoelectric film growth in mass production. An ideal lossy bulk acoustic resonator (LBAR) model is introduced and the theory behind the method is presented. A high-tone bulk acoustic resonator (HBAR) was fabricated on a silicon wafer. The impedance response of the resonator was measured, from which the K t 2 of the piezoelectric material was extracted. To illustrate the potential of the proposed technique to extract material properties, two HBAR devices employing AlN as the piezoelectric material were fabricated using an RF sputter system with known good and bad deposition conditions; the extracted K t 2 values of the piezoelectric material are compared.

Original languageEnglish (US)
Article number6202419
Pages (from-to)958-962
Number of pages5
JournalIEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
Volume59
Issue number5
DOIs
StatePublished - May 31 2012

ASJC Scopus subject areas

  • Instrumentation
  • Acoustics and Ultrasonics
  • Electrical and Electronic Engineering

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