TY - JOUR
T1 - Extracting the electromechanical coupling constant of piezoelectric thin film by the high-tone bulk acoustic resonator technique
AU - Zhou, Chong
AU - Pang, Wei
AU - Li, Qiang
AU - Yu, Hongyu
AU - Hu, Xiaotang
AU - Zhang, Hao
N1 - Funding Information:
Manuscript received november 1, 2011; accepted January 18, 2012. This material is based upon work supported by the Ph.d. Program Foundation of the Ministry of Education of china # 20100032120056 and the national nature science Foundation of china # 61006074. c. Zhou, W. Pang, X. Hu, and H. Zhang are with the state Key laboratory of Precision Measuring Technology and Instruments, Tianjin University, Tianjin, china (e-mail: haozhang@tju.edu.cn). q. li is with the school of Electronic Information Engineering, Tianjin University, Tianjin, china. H. yu is with the school of Earth and space Exploration, arizona state University, Tempe, aZ. doI http://dx.doi.org/10.1109/TUFFc.2012.2280
PY - 2012
Y1 - 2012
N2 - In this paper, a new approach is proposed to rapidly and accurately measure the electromechanical coupling constant K t 2 of thin film piezoelectric material, which is critically important for real-time quality control of the piezoelectric film growth in mass production. An ideal lossy bulk acoustic resonator (LBAR) model is introduced and the theory behind the method is presented. A high-tone bulk acoustic resonator (HBAR) was fabricated on a silicon wafer. The impedance response of the resonator was measured, from which the K t 2 of the piezoelectric material was extracted. To illustrate the potential of the proposed technique to extract material properties, two HBAR devices employing AlN as the piezoelectric material were fabricated using an RF sputter system with known good and bad deposition conditions; the extracted K t 2 values of the piezoelectric material are compared.
AB - In this paper, a new approach is proposed to rapidly and accurately measure the electromechanical coupling constant K t 2 of thin film piezoelectric material, which is critically important for real-time quality control of the piezoelectric film growth in mass production. An ideal lossy bulk acoustic resonator (LBAR) model is introduced and the theory behind the method is presented. A high-tone bulk acoustic resonator (HBAR) was fabricated on a silicon wafer. The impedance response of the resonator was measured, from which the K t 2 of the piezoelectric material was extracted. To illustrate the potential of the proposed technique to extract material properties, two HBAR devices employing AlN as the piezoelectric material were fabricated using an RF sputter system with known good and bad deposition conditions; the extracted K t 2 values of the piezoelectric material are compared.
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U2 - 10.1109/TUFFC.2012.2280
DO - 10.1109/TUFFC.2012.2280
M3 - Article
C2 - 22622980
AN - SCOPUS:84861500450
SN - 0885-3010
VL - 59
SP - 958
EP - 962
JO - IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
JF - IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
IS - 5
M1 - 6202419
ER -