Abstract

It is well known that Cu plays an important role in CdTe solar cell performance as a dopant. In this work, a finite-difference method is developed and used to simulate Cu diffusion in CdTe solar cells. In the simulations, which are done on a two-dimensional (2D) domain, the CdTe is assumed to be polycrystal-line, with the individual grains separated by grain boundaries. When used to fit experimental Cu concentration data, bulk and grain boundary diffusion coefficients and activation energies for CdTe can be extracted. In the past, diffusion coefficients have been typically obtained by fitting data to simple functional forms of limited validity. By doing full simulations, the simplifying assumptions used in those analytical models are avoided and diffusion parameters can thus be determined more accurately.

Original languageEnglish (US)
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages3276-3281
Number of pages6
ISBN (Print)9781479943982
DOIs
StatePublished - Oct 15 2014
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: Jun 8 2014Jun 13 2014

Other

Other40th IEEE Photovoltaic Specialist Conference, PVSC 2014
CountryUnited States
CityDenver
Period6/8/146/13/14

Fingerprint

Solar cells
Grain boundaries
Polycrystals
Finite difference method
Analytical models
Activation energy
Doping (additives)

Keywords

  • CdTe
  • copper
  • grain boundaries
  • impurity diffusion
  • numerical simulation
  • photovoltaic cells

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Akis, R., Brinkman, D., Sankin, I., Fang, T., Guo, D., Vasileska, D., & Ringhofer, C. (2014). Extracting Cu diffusion parameters in polycrystalline CdTe. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (pp. 3276-3281). [6925635] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2014.6925635

Extracting Cu diffusion parameters in polycrystalline CdTe. / Akis, R.; Brinkman, D.; Sankin, I.; Fang, T.; Guo, D.; Vasileska, Dragica; Ringhofer, Christian.

2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 3276-3281 6925635.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Akis, R, Brinkman, D, Sankin, I, Fang, T, Guo, D, Vasileska, D & Ringhofer, C 2014, Extracting Cu diffusion parameters in polycrystalline CdTe. in 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014., 6925635, Institute of Electrical and Electronics Engineers Inc., pp. 3276-3281, 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States, 6/8/14. https://doi.org/10.1109/PVSC.2014.6925635
Akis R, Brinkman D, Sankin I, Fang T, Guo D, Vasileska D et al. Extracting Cu diffusion parameters in polycrystalline CdTe. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 3276-3281. 6925635 https://doi.org/10.1109/PVSC.2014.6925635
Akis, R. ; Brinkman, D. ; Sankin, I. ; Fang, T. ; Guo, D. ; Vasileska, Dragica ; Ringhofer, Christian. / Extracting Cu diffusion parameters in polycrystalline CdTe. 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 3276-3281
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